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FB41N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IIRFB41N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤45m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB41N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.045ohm,Id=41A)

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15D

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤45m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB41N15DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB41N15DPBF

HighfrequencyDC-DCconverters

Benefits ●LowGate-to-DrainChargetoReduce ??SwitchingLosses ●FullyCharacterizedCapacitanceIncluding ??EffectiveCOSStoSimplifyDesign,(SeeApp. ??NoteAN1001) ●FullyCharacterizedAvalancheVoltage ??andCurrent ●Lead-Free Applications ●HighfrequencyDC-DCconverters

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFB41N15DPBF

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRFIB41N15D

HEXFETPowerMOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFIB41N15D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

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更多IRFS41N15DTRPBF-VB供應(yīng)商 更新時(shí)間2025-2-14 13:58:00

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