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IRFZ48NS

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRFZ48NS

Marking:D2PAK;Package:TO-263;isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFZ48NSPBF

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFZ48NSPBF

Marking:D2PAK;Package:TO-263;N-Channel 60-V (D-S) MOSFET

FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

IRFZ48PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ48R

Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=50*A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRFZ48R

Power MOSFET

DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ48RL

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRFZ48RL

Power MOSFET

DESCRIPTION AdvancedPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanext

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFZ48RLPBF

HEXFET POWER MOSFET ( VDSS = 60V , RDS(on) = 0.018廓 , ID = 50A )

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFZ48

  • 制造商:

    Vishay Angstrohm

  • 功能描述:

    Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220AB

  • 制造商:

    Vishay Semiconductors

  • 功能描述:

    TRANS MOSFET N-CH 60V 50A 3PIN TO-220AB - Bulk

  • 制造商:

    NULL

  • 功能描述:

    Vishay Intertechnology IRFZ48 MOSFETs

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
臺(tái)產(chǎn)大芯片
24+
TO-220
2000
全新原裝深圳倉庫現(xiàn)貨有單必成
詢價(jià)
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
詢價(jià)
IR
24+
TO-220
5000
詢價(jià)
IR
23+
TO-220
35890
詢價(jià)
IR
24+
原廠封裝
5327
原裝現(xiàn)貨假一罰十
詢價(jià)
IR
23+
TO-220
6000
特價(jià)庫存
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
IR
25+23+
TO-220
30030
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
IR
18+
TO-220
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
詢價(jià)
IR
6000
面議
19
TO-220
詢價(jià)
更多IRFZ48供應(yīng)商 更新時(shí)間2025-4-8 12:52:00