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IRL520L_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesinform

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL520PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL520PBF

Power MOSFET

FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?Logic-LevelGateDrive ?RDS(on)SpecifiedatVGS=4Vand5V ?175°COperatingTemperature ?FastSwitching ?EaseofParalleling ?ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfrom

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL530

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL530

Advanced Power MOSFET

BVDSS=100V RDS(on)=0.12Ω ID=14A FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=100V ●LowerRDS(ON):0.101Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL530_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL530A

Advanced Power MOSFET

BVDSS=100V RDS(on)=0.12Ω ID=14A FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=100V ●LowerRDS(ON):0.101Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRL530S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logiclevelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL530S_V01

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logiclevelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?175°Coperatingtemperature ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL540

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細參數(shù)

  • 型號：

    IRL

  • 制造商：

    International Rectifier

  • 功能描述：

    Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
IOR
24+
SMD
2500
新
 詢價
IR
1902+
TO
2734
代理品牌
 詢價
FAIRCHIL
23+
TO-252
8600
全新原裝現(xiàn)貨
 詢價
IR
24+
SOT-23
9544
原裝現(xiàn)貨假一罰十
 詢價
IR
20+
SOT-223
11520
特價全新原裝公司現(xiàn)貨
 詢價
INFINOEN
24+
TO-220-3
90000
一級代理進口原裝現(xiàn)貨、假一罰十價格合理
 詢價
I
23+
D-PAK
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
VBsemi/臺灣微碧
23+
TO-263
30000
代理全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
IR
24+
TO-220
18500
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售
 詢價
IR
21+
SOP-8
1670
只做原裝,絕對現(xiàn)貨,原廠代理商渠道,可加微信查詢價
 詢價
更多IRL供應(yīng)商 更新時間2025-4-22 16:00:00

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