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IRL620S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logiclevelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620S

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheSMD-220isasurface-mountpowerpackagecapableofa

IRF

International Rectifier

IRL620S_V01

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logiclevelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620SPBF

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logiclevelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL620SPBF

HEXFET Power MOSFET

VDSS=200V RDS(on)=0.80? ID=5.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheSMD-220isasurface-mountpowerpackagecapableofa

IRF

International Rectifier

IRL620STRLPBFA

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logiclevelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL6283MTRPBF

Load switch for battery application

Description TheIRL6283MTRPbFcombinesthelatestHEXFET?N-ChannelPowerMOSFETSilicontechnologywiththeadvancedDirectFET?packagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.6mmprofile.TheDirectFET?packageiscompatiblewithexi

IRF

International Rectifier

IRL630

Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL630

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?150°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRL630

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?150°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRL

  • 制造商：

    International Rectifier

  • 功能描述：

    Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
24+
TO-220
80000
代理進(jìn)口原裝現(xiàn)貨假一賠十
 詢價(jià)
IR
2015+
TO-220F
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價(jià)
IR
25+23+
TO-263
36947
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
IR
24+
SOT23-3
5825
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!
 詢價(jià)
IR
0
2013
1
SOT-23
 詢價(jià)
最新
2000
原裝正品現(xiàn)貨
 詢價(jià)
IR
24+
TO-220
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價(jià)
INFINEON
23+
SOT23
3000
原裝正品假一罰百!可開增票!
 詢價(jià)
IOR
24+
SMD
2500
新
 詢價(jià)
IOR
0541+P
SOT23-3
2842
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價(jià)
更多IRL供應(yīng)商 更新時(shí)間2025-4-22 16:54:00

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