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IRL630

Power MOSFET

VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導體

IRL630_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?150°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導體

IRL630A

Advanced Power MOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?Logic-LevelGateDrive ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.335?

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRL630PBF

HEXFET? Power MOSFET

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

IRL630PBF

Power MOSFET

VDS(V)200V RDS(on)(Ω)VGS=5V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導體

IRL630S

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableo

IRF

International Rectifier

IRL630S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?150°Coperatingtemperature ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

VishayVishay Siliconix

威世科技威世科技半導體

IRL630S_V01

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?150°Coperatingtemperature ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc

VishayVishay Siliconix

威世科技威世科技半導體

IRL630SPBF

HEXFET Power MOSFET

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheSMD-220isasurfacemountpowerpackagecapableof

IRF

International Rectifier

IRL640

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidesthedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissip

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRL

  • 制造商：

    International Rectifier

  • 功能描述：

    Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
ir
23+
9000
原裝真實現(xiàn)貨庫存,專業(yè)定貨,特價
 詢價
IR
19+
TO-220AB
75312
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
IOR
24+
SMD
2500
新
 詢價
VISHAY/威世
08+
SOT223
28594
原盤環(huán)保/2500
 詢價
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價
IR優(yōu)勢
SOT-23
3164
正品原裝--自家現(xiàn)貨-實單可談
 詢價
IR
24+
SOT23
20000
全新原廠原裝，進口正品現(xiàn)貨，正規(guī)渠道可含稅??！
 詢價
IR
17+
SOT-23
6200
100%原裝正品現(xiàn)貨
 詢價
IR
24+
TO220
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價
IR
24+
TO-220
80000
代理進口原裝現(xiàn)貨假一賠十
 詢價
更多IRL供應(yīng)商 更新時間2025-4-18 8:27:00

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