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IRLI630A

ADVANCED POWER MOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLI630A

Advanced Power MOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.

IRF

International Rectifier

IRLI630A

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRLI630G

PowerMOSFET(Vdss=200V,Rds(on)=0.40ohm,Id=6.2A)

VDSS=200V RDS(on)=0.40? ID=6.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalins

IRF

International Rectifier

IRLI630G

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI630G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI630GPBF

HEXFETPowerMOSFET

VDSS=200V RDS(on)=0.40? ID=6.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalins

IRF

International Rectifier

IRLI630GPBF

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI630GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLS630A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=6.5A FEATURES ●Logic-LevelGateDrive ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):0

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRLI630A

  • 制造商：

    FAIRCHILD

  • 制造商全稱(chēng)：

    Fairchild Semiconductor

  • 功能描述：

    ADVANCED POWER MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
FAIRCHILD/仙童
24+
TO 262
155617
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
仙童
05+
TO-262
2500
原裝進(jìn)口
 詢(xún)價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢(xún)價(jià)
24+
TO-262
6430
原裝現(xiàn)貨/歡迎來(lái)電咨詢(xún)
 詢(xún)價(jià)
I
23+
TO-220F
10000
公司只做原裝正品
 詢(xún)價(jià)
I
22+
TO-220F
6000
十年配單,只做原裝
 詢(xún)價(jià)
VB
TO-220F
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢(xún)價(jià)
I
23+
TO-220F
6000
原裝正品，支持實(shí)單
 詢(xún)價(jià)
I
22+
TO-220F
25000
只做原裝進(jìn)口現(xiàn)貨,專(zhuān)注配單
 詢(xún)價(jià)
I
24+
TO-TO-220F
12300
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢(xún)價(jià)
更多IRLI630A供應(yīng)商 更新時(shí)間2025-2-7 19:10:00

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