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MJD3055

TRANSISTOR(NPN)

FS

First Silicon Co., Ltd

MJD3055

iscSiliconNPNPowerTransistor

DESCRIPTION ?ExcellentSafeOperatingArea ?Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A ?ComplementtoTypeMJD2955 ?DPAKforSurfaceMountApplications ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designed

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications ●ElectricallySimiartoMJE3055 ●DCCurrentGainSpecifiedto10A

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長(zhǎng)電科技江蘇長(zhǎng)電科技股份有限公司

MJD3055

TO-252-2LPlastic-EncapsulateTransistors

FEATURES DesignedforGeneralPurposeAmplifierdanLowSpeed SwitchingApplications ElectricallySimiartoMJE3055 DCCurrentGainSpecifiedto10Amperes

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055

SiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=60V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=1.1V(Max)@IC=4A ·ComplementtoTypeMJD2955 APPLICATIONS ·Designedforlowpoweraudioamplifierandlow-current, high-speedswitchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJD3055G

ComplementaryPowerTransistorsDPAKForSurfaceMountApplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJD3055G

ComplementaryPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    KZT3055

  • 制造商：

    KEXIN

  • 制造商全稱：

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述：

    2.0W Surface Mount Complementary NPN Silicon Power Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
KEXIN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
24+
N/A
67000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
KEXIN
22+
SOD123
28
進(jìn)口原裝
 詢價(jià)
KEXIN/科信
21+
SOT-23
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
KEXIN
24+
SOT-23
5000
一級(jí)代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
KEXIN
24+
SOT-23
5000
十年沉淀唯有原裝
 詢價(jià)
KEXIN
23+
SOT-23
20000
詢價(jià)
KEXIN
24+
SOT-23
5000
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
KEXIN
22+23+
SOT-23
8000
新到現(xiàn)貨，只做原裝進(jìn)口
 詢價(jià)
KEXIN
24+
SOT-23
8000
原裝，正品
 詢價(jià)
更多KZT3055供應(yīng)商 更新時(shí)間2025-4-26 9:00:00

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