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MJD3055G

ComplementaryPowerTransistors

ComplementaryPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features ?LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) ?StraightLeadVersioninPlasticSleeves(“?1”Suff

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MJE3055

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJE3055Tisasiliconepitaxial-baseNPNtransistorinJedecTO-220package.Itisintendedforpowerswitchingcircuitsandgeneral-purposeamplifiers.ThecomplementaryPNPtypeisMJE2955T. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARYPNP-NPNDEVICES

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

MJE3055

10AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60VOLTS75WATTS

ComplementarySiliconPlasticPowerTransistors ...designedforuseingeneral–purposeamplifierandswitchingapplications. ?DCCurrentGainSpecifiedto10Amperes ?HighCurrentGain—BandwidthProduct— fT=2.0MHz(Min)@IC=500mAdc

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MJE3055

NPN(GENERALPURPOSEANDSWITCHINGAPPLICATIONS)

GENERALPUPOSEANDSWITCHINGAPPLICATIONS DCCURRENTGAINSPECIFIEDTO10AMPERES HighCurrentGain-BandwidthProduct(fT=25°C)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

MJE3055

SILICONEPITAXIALPLANARTRANSISTOR

GENERALDESCRIPTION Complementary,highpowertransistorsinaplasticenvelope,primarilyforuseinaudioandgeneralpurpose

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

MJE3055

GeneralPurposeandSwitchingApplications

GeneralPurposeandSwitchingApplications ?DCCurrentGainSpecifiedtoIC=10A ?HighCurrentGain-BandwidthProduct:fT=2MHz(Min.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

MJE3055

Plastic-EncapsulatedTransistors

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:2W(Tamb=25℃) Collectorcurrent ICM:10A Collector-basevoltage V(BR)CBO:70V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

MJE3055

Plastic-EncapsulatePowerTransistors

Plastic-EncapsulatePowerTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

MJE3055

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage-:V(BR)CEO=60V(Min) ·HighDCCurrentGain-:hFE=20-100@IC=4A ·ComplementtoTypeMJE2955 APPLICATIONS ·Designedforuseingeneral-purposeamplifierandswitchingapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MJE3055

NPNSiliconPlastic-EncapsulateTransistor

Features ?Halogenfreeavailableuponrequestbyaddingsuffix-HF ?LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) ?Capableof2.0WattsofPowerDissipation. ?Collector-current10A ?Collector-baseVoltage70V ?Operatingandst

MCCMicro Commercial Components

美微科美微科半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    KZT3055

  • 制造商：

    KEXIN

  • 制造商全稱：

    Guangdong Kexin Industrial Co.,Ltd

  • 功能描述：

    2.0W Surface Mount Complementary NPN Silicon Power Transistor

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
KEXIN
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
24+
N/A
67000
一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇
 詢價(jià)
KEXIN
22+
SOD123
28
進(jìn)口原裝
 詢價(jià)
KEXIN/科信
21+
SOT-23
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
KEXIN
24+
SOT-23
5000
一級代理保證進(jìn)口原裝正品現(xiàn)貨假一罰十價(jià)格合理
 詢價(jià)
KEXIN
24+
SOT-23
5000
十年沉淀唯有原裝
 詢價(jià)
KEXIN
23+
SOT-23
20000
詢價(jià)
KEXIN
24+
SOT-23
5000
全新原裝正品,現(xiàn)貨銷售
 詢價(jià)
KEXIN
22+23+
SOT-23
8000
新到現(xiàn)貨，只做原裝進(jìn)口
 詢價(jià)
KEXIN
24+
SOT-23
8000
原裝，正品
 詢價(jià)
更多KZT3055供應(yīng)商 更新時(shí)間2025-4-26 9:00:00

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