NCE60P45K

Marking：NCE60P45K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P45Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=-60V,ID=-45A RDS(ON)

NCE60P50G

Marking：NCE60P50G；Package：DFN5X6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P50Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications.Application ●Highsideswitchforfullbridgeconverter ●DC/DCconverterforLCDdisplay GeneralFeatures

NCE60P50K

P-channel Enhancement Mode Power MOSFET

Features VDS=-60V,ID=-50A RDS(ON)

NCE60P55K

Marking：NCE60P55K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P55Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications.GeneralFeatures ●VDS=-60V,ID=-55A RDS(ON)

NCE60P65K

Marking：NCE60P65K；Package：TO-252-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P65Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications.GeneralFeatures ●VDS=-60V,ID=-65A RDS(ON)

NCE60P70D

Marking：NCE60P70D；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P70Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=-60V,ID=-70A RDS(ON)

NCE60P70G

Marking：NCE60P70G；Package：DFN5X6-8L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P70Gusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications.Application ●Highsideswitchforfullbridgeconverter ●DC/DCconverterfor GeneralFeatures ●VDS=-60V

NCE60P82A

Marking：NCE60P82A；Package：TO-220-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P82Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-60V,ID=-82A RDS(ON)

NCE60P82AD

Marking：NCE60P82AD；Package：TO-263-2L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P82ADusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceiswellsuitedforhighcurrentloadapplications. GeneralFeatures ●VDS=-60V,ID=-82A RDS(ON)

NCE60P82AF

Marking：NCE60P82AF；Package：TO-220F-3L；NCE P-Channel Enhancement Mode Power MOSFET

Description TheNCE60P82AFusesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis wellsuitedforhighcurrentloadapplications. Application ●Loadswitch GeneralFeatures ●VDS=-60V,ID=-41A RDS(ON)