NCE6080EK

Marking：NCE6080EK；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6080EKusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=80A RDS(ON)

NCE609

Marking：NCE609；Package：TO-252-4L；N and P-Channel Enhancement Mode Power MOSFET

Description TheNCE609usesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thecomplementary MOSFETsmaybeusedtoformalevelshiftedhighside switch,andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=40V,ID=21A RDS(ON)

NCE60H10D

Marking：NCE60H10D；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H10Dusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceissuitableforuseinPWM,loadswitchingandgeneral purposeapplications.GeneralFeatures ●VDS=60V,ID=100A RDS(ON)

NCE60H10K

Marking：NCE60H10K；Package：TO-252-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H10Kusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.This deviceissuitableforuseinPWM,loadswitchingandgeneral purposeapplications.GeneralFeatures ●VDS=60V,ID=100A RDS(ON)

NCE60H15A

Marking：NCE60H15A；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15Ausesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCE60H15AD

Marking：NCE60H15AD；Package：TO-263-2L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15ADusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCE60H15AT

Marking：NCE60H15AT；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15ATusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCE60H15T

Marking：NCE60H15T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H15Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=150A RDS(ON)

NCE60H18

Marking：NCE60H18；Package：TO-220-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H18usesadvancedtrenchtechnologyanddesign toprovideexcellentRDS(ON)withlowgatecharge.Thisdeviceis suitableforuseinPWM,loadswitchingandgeneralpurpose applications.GeneralFeatures ●VDS=60V,ID=180A RDS(ON)

NCE60H21

Marking：NCE60H21；Package：TO-220；NCE N-Channel Enhancement Mode Power MOSFET

DESCRIPTION TheNCE60H21usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GENERALFEATURES ●VDS=60V,ID=210A RDS(ON)