NCE60H28LL

Marking：NCE60H28LL；Package：TO-LL；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H28LLusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Hardswitchedandhighfrequencycircuits ●Uninterruptiblepowersupply Gen

NCE60H30T

Marking：NCE60H30T；Package：TO-247；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60H30Tusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=300A RDS(ON)

NCE60ND03N

Marking：60ND03N；Package：SOT-23-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND03Nusesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeandoperationwith gatevoltagesaslowas2.5V.Thisdeviceissuitableforuseas aBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCE60ND03S

Marking：60ND03S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND03Susesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatechargeandoperationwith gatevoltagesaslowas2.5V.Thisdeviceissuitableforuseas aBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCE60ND08S

Marking：NCE60ND08S；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND08Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=8A RDS(ON)

NCE60ND45AG

Marking：60ND45AG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND45AGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.Itcan beusedinawidevarietyofapplications.Application ●DC/DCConverter ●Idealforhigh-frequencyswitchingandsynchronous rectification

NCE60ND45XG

Marking：60ND45XG；Package：DFN5X6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE60ND45XGusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.Application ●Powerswitchingapplication ●Loadswitch

NCE60NP09S

Marking：NCE60NP09S；Package：SOP-8；NCE 60V Complementary MOSFET

Description TheNCE60NP09Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=9A RDS(ON)

NCE60NP1515K

Marking：60NP1515K；Package：TO-252-4L；NCE N&P-Channel complementary Power MOSFET

Description TheNCE60NP1515Kusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=15A RDS(ON)

NCE60NP2012K

Marking：60NP2012K；Package：TO-252-4L；NCE N&P-Channel complementary Power MOSFET

Description TheNCE60NP2012Kusesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. GeneralFeatures Nchannel ●VDS=60V,ID=20A RDS(ON)