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NE5517DR2G

Dual Operational Transconductance Amplifier

TheAU5517andNE5517containtwocurrent-controlledtransconductanceamplifiers,eachwithadifferentialinputandpush-pulloutput.TheAU5517/NE5517offerssignificantdesignandperformanceadvantagesoversimilardevicesforalltypesofprogrammablegainapplications.Circuitperformanceis

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NE5517N

Dual operational transconductance amplifier

DESCRIPTION TheAU5517andNE5517containtwocurrent-controlledtransconductanceamplifiers,eachwithadifferentialinputandpush-pulloutput.TheAU5517/NE5517offerssignificantdesignandperformanceadvantagesoversimilardevicesforalltypesofprogrammablegainapplications.Circuitp

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

NE5517N

Dual Operational Transconductance Amplifier

TheAU5517andNE5517containtwocurrent-controlledtransconductanceamplifiers,eachwithadifferentialinputandpush-pulloutput.TheAU5517/NE5517offerssignificantdesignandperformanceadvantagesoversimilardevicesforalltypesofprogrammablegainapplications.Circuitperformanceis

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NE5517NG

Dual Operational Transconductance Amplifier

TheAU5517andNE5517containtwocurrent-controlledtransconductanceamplifiers,eachwithadifferentialinputandpush-pulloutput.TheAU5517/NE5517offerssignificantdesignandperformanceadvantagesoversimilardevicesforalltypesofprogrammablegainapplications.Circuitperformanceis

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NE5520279A

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2technology(ourWSigatelaterallydiffusedMOSFET)andhousedinasurfacemountpackage

CEL

California Eastern Labs

NE5520279A

SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520279A-T1

Marking：A2；Package：79A；SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520279A-T1A

Marking：A2；Package：79A；SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FOR1.8GHz1.6WTRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthe transmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520279A-T1-A

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION TheNE5520279AisanN-channelsiliconpowerlaterallydiffusedMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VDCS1800handsets.DiesaremanufacturedusingourNEWMOS2technology(ourWSigatelaterallydiffusedMOSFET)andhousedinasurfacemountpackage

CEL

California Eastern Labs

NE5520379A

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECsNE5520379AisanN-ChannelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VGSM900handsets.DiearemanufacturedusingNECsNEWMOStechnology(NECs0.6μmWSigatelateralMOSFET)andhousedinasurfacemountpackage.Thisdevicecandeliver

CEL

California Eastern Labs

替換型號

詳細(xì)參數(shù)

  • 型號：

    NE55

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    SILICON POWER MOS FET

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PHI
24+
DIP14
3629
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NXP
24+
SOP
5000
全現(xiàn)原裝公司現(xiàn)貨
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TI
1527
SOP-8
5000
原廠直銷
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TEXASINSTRUMENTS
新
1030
全新原裝 貨期兩周
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HGSEMI(華冠)
22+
NA
500000
萬三科技,秉承原裝,購芯無憂
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TI
25+
SOP-8
7500
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ST
2019+/2020+
SOP14
25000
原裝正品現(xiàn)貨庫存
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NE
20+
SOP
6532
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TI
10+
SOP8
26017
原盤現(xiàn)貨/2500
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NEC
23+
SMD
12000
全新原裝優(yōu)勢
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更多NE55供應(yīng)商 更新時(shí)間2025-4-1 16:48:00

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