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NE5520379A

SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FORGSM/DCSDUAL-BANDPHONETRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520379AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for3.2VGSM900handsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520379A-T1

Marking:A3;Package:79A;SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FORGSM/DCSDUAL-BANDPHONETRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520379AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for3.2VGSM900handsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520379A-T1A

Marking:A3;Package:79A;SILICON POWER MOS FET

3.2VOPERATIONSILICONRFPOWERLDMOSFET FORGSM/DCSDUAL-BANDPHONETRANSMISSIONAMPLIFIERS DESCRIPTION TheNE5520379AisanN-channelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifier for3.2VGSM900handsets.DiesaremanufacturedusingourNEWMOStechnology

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE5520379A-T1A-A

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECsNE5520379AisanN-ChannelsiliconpowerMOSFETspeciallydesignedasthetransmissionpoweramplifierfor3.2VGSM900handsets.DiearemanufacturedusingNECsNEWMOStechnology(NECs0.6μmWSigatelateralMOSFET)andhousedinasurfacemountpackage.Thisdevicecandeliver

CEL

California Eastern Labs

NE5521

LVDT signal conditioner

DESCRIPTION TheNE/SA/SE5521isasignalconditioningcircuitforusewithLinearVariableDifferentialTransformers(LVDTs)andRotaryVariableDifferentialTransformers(RVDTs).Thechipincludesalowdistortion,amplitude-stablesinewaveoscillatorwithprogrammablefrequencytodrivethe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

NE5521D

LVDT signal conditioner

DESCRIPTION TheNE/SA/SE5521isasignalconditioningcircuitforusewithLinearVariableDifferentialTransformers(LVDTs)andRotaryVariableDifferentialTransformers(RVDTs).Thechipincludesalowdistortion,amplitude-stablesinewaveoscillatorwithprogrammablefrequencytodrivethe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

NE5521N

LVDT signal conditioner

DESCRIPTION TheNE/SA/SE5521isasignalconditioningcircuitforusewithLinearVariableDifferentialTransformers(LVDTs)andRotaryVariableDifferentialTransformers(RVDTs).Thechipincludesalowdistortion,amplitude-stablesinewaveoscillatorwithprogrammablefrequencytodrivethe

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

NE552R479A

SILICON POWER MOS FET

3.0VOPERATIONSILICONRFPOWERLDMOSFET FOR2.45GHz0.4WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE552R479A-T1

SILICON POWER MOS FET

3.0VOPERATIONSILICONRFPOWERLDMOSFET FOR2.45GHz0.4WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NE552R479A-T1A

SILICON POWER MOS FET

3.0VOPERATIONSILICONRFPOWERLDMOSFET FOR2.45GHz0.4WTRANSMISSIONAMPLIFIERS

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號:

    NE55

  • 制造商:

    NEC

  • 制造商全稱:

    NEC

  • 功能描述:

    SILICON POWER MOS FET

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TI
23+
SOIC
5500
現(xiàn)貨,全新原裝
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PH
2020+
SOP16
360
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24+
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3629
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ST
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7500
絕對原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!
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ST
19+
DIP
87057
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NEC
23+
SMD
12000
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TEXASINSTRUMENTS
1030
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TI
1902+
DIP
2734
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TI
22+
DIP8
5000
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TI
1527
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5000
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更多NE55供應(yīng)商 更新時(shí)間2025-4-4 10:50:00