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NESG260234-T1

NPN SILICON GERMANIUM RF TRANSISTOR

FEATURES ?Thisproductissuitableformediumoutputpower(1W)amplification Pout=30dBmTYP.@VCE=6V,Pin=15dBm,f=460MHz Pout=30dBmTYP.@VCE=6V,Pin=20dBm,f=900MHz ?MSG(MaximumStableGain)=23dBTYP.@VCE=6V,Ic=100mA,f=460MHz ?UsingUHS2-HVpr

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG260234-T1-AZ

NPN SILICON GERMANIUM RF TRANSISTOR

FEATURES ?Thisproductissuitableformediumoutputpower(1W)amplification Pout=30dBmTYP.@VCE=6V,Pin=15dBm,f=460MHz Pout=30dBmTYP.@VCE=6V,Pin=20dBm,f=900MHz ?MSG(MaximumStableGain)=23dBTYP.@VCE=6V,Ic=100mA,f=460MHz ?UsingUHS2-HVpr

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG270034

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(2W) 3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thisproductissuitableformediumoutputpower(2W)amplification Pout=33.5dBmTYP.@VCE=6V,Pin=20dBm,f=460MHz Pout=31.5dBmTYP.@VCE=6V,Pin=20dBm,f=9

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG270034-AZ

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(2W) 3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thisproductissuitableformediumoutputpower(2W)amplification Pout=33.5dBmTYP.@VCE=6V,Pin=20dBm,f=460MHz Pout=31.5dBmTYP.@VCE=6V,Pin=20dBm,f=9

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG270034-T1

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(2W) 3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thisproductissuitableformediumoutputpower(2W)amplification Pout=33.5dBmTYP.@VCE=6V,Pin=20dBm,f=460MHz Pout=31.5dBmTYP.@VCE=6V,Pin=20dBm,f=9

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG270034-T1-AZ

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(2W) 3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thisproductissuitableformediumoutputpower(2W)amplification Pout=33.5dBmTYP.@VCE=6V,Pin=20dBm,f=460MHz Pout=31.5dBmTYP.@VCE=6V,Pin=20dBm,f=9

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

FEATURES ?LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz ?MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz ?SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NESG3031M05

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG3031M05-T1

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

FEATURES ?LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz ?MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz ?SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

產(chǎn)品屬性

  • 產(chǎn)品編號：

    NES

  • 制造商：

    Altech Corporation

  • 類別：

    電路保護(hù) > 配件

  • 包裝：

    散裝

  • 描述：

    BUSBAR SUPP W FIXING SCREW(50

供應(yīng)商型號品牌批號封裝庫存備注價格
NECT1K原裝
SOT-343
3000
原裝長期供貨!
 詢價
PHILLIPS
24+
SMD
7500
絕對原裝自家現(xiàn)貨!真實(shí)庫存!歡迎來電!
 詢價
NEC
25+
SM
1200
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù)
 詢價
NEC
17+
SOT-343
6200
100%原裝正品現(xiàn)貨
 詢價
NEC
23+
原廠封裝
9896
詢價
RENESAS
12+
SOT343
3000
詢價
NEC
24+
SOT343
6980
原裝現(xiàn)貨,可開13%稅票
 詢價
MW
23+
模塊
1000
原裝正品,假一罰十
 詢價
NECELECTRON
24+
原封裝
18514
原裝現(xiàn)貨假一罰十
 詢價
NICHIA
13+
32325
原裝分銷
 詢價
更多NES供應(yīng)商 更新時間2025-4-22 16:20:00

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