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NESG240034-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.7dBTYP.@VCE=5V,IC=15mA,f=1GHz ?PO(1dB)=24dBmTYP.@VCE=5V,IC(set

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG240034-T1

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.7dBTYP.@VCE=5V,IC=15mA,f=1GHz ?PO(1dB)=24dBmTYP.@VCE=5V,IC(set

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG240034-T1

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.7dBTYP.@VCE=5V,IC=15mA,f=1GHz ?PO(1dB)=24dBmTYP.@VCE=5V,IC(set

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG240034-T1-A

NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

NPNSiGeRFTRANSISTORFORUHF-BAND,LOWNOISE,LOWDISTORTIONAMPLIFICATION3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thedeviceisanidealchoiceforlownoise,lowdistortionamplification. NF=0.7dBTYP.@VCE=5V,IC=15mA,f=1GHz ?PO(1dB)=24dBmTYP.@VCE=5V,IC(set

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG250134

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(800mW) 3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thisproductissuitableformediumoutputpower(800mW)amplification PO=29dBmTYP.@VCE=3.6V,Pin=15dBm,f=460MHz PO=29dBmTYP.@VCE=3.6V,Pin=20dBm,f=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG250134-AZ

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(800mW) 3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thisproductissuitableformediumoutputpower(800mW)amplification PO=29dBmTYP.@VCE=3.6V,Pin=15dBm,f=460MHz PO=29dBmTYP.@VCE=3.6V,Pin=20dBm,f=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG250134-T1

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(800mW) 3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thisproductissuitableformediumoutputpower(800mW)amplification PO=29dBmTYP.@VCE=3.6V,Pin=15dBm,f=460MHz PO=29dBmTYP.@VCE=3.6V,Pin=20dBm,f=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG250134-T1-AZ

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(800mW) 3-PINPOWERMINIMOLD(34PKG) FEATURES ?Thisproductissuitableformediumoutputpower(800mW)amplification PO=29dBmTYP.@VCE=3.6V,Pin=15dBm,f=460MHz PO=29dBmTYP.@VCE=3.6V,Pin=20dBm,f=

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG260234

NPN SILICON GERMANIUM RF TRANSISTOR

FEATURES ?Thisproductissuitableformediumoutputpower(1W)amplification Pout=30dBmTYP.@VCE=6V,Pin=15dBm,f=460MHz Pout=30dBmTYP.@VCE=6V,Pin=20dBm,f=900MHz ?MSG(MaximumStableGain)=23dBTYP.@VCE=6V,Ic=100mA,f=460MHz ?UsingUHS2-HVpr

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG260234-AZ

NPN SILICON GERMANIUM RF TRANSISTOR

FEATURES ?Thisproductissuitableformediumoutputpower(1W)amplification Pout=30dBmTYP.@VCE=6V,Pin=15dBm,f=460MHz Pout=30dBmTYP.@VCE=6V,Pin=20dBm,f=900MHz ?MSG(MaximumStableGain)=23dBTYP.@VCE=6V,Ic=100mA,f=460MHz ?UsingUHS2-HVpr

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    NES

  • 制造商:

    Altech Corporation

  • 類別:

    電路保護(hù) > 配件

  • 包裝:

    散裝

  • 描述:

    BUSBAR SUPP W FIXING SCREW(50

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
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絕對(duì)原裝自家現(xiàn)貨!真實(shí)庫(kù)存!歡迎來(lái)電!
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100%原裝正品現(xiàn)貨
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原裝分銷
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更多NES供應(yīng)商 更新時(shí)間2025-4-22 16:20:00