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NESG2101M16-T3

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(125mW) 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,highgain amplification PO(1dB)=21dBmTYP.@VCE=3.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2101M16-T3-A

NPN SILICON GERMANIUM RF TRANSISTOR

NPNSiGeRFTRANSISTORFOR MEDIUMOUTPUTPOWERAMPLIFICATION(125mW) 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES ?Thedeviceisanidealchoiceformediumoutputpower,high-gainamplificationandlowdistortion,lownoise,highgain amplification PO(1dB)=21dBmTYP.@VCE=3.6

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES ?IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS ?HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR ?3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG210719

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719-T1

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES ?IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS ?HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR ?3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NESG210719-T1

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG210719-T1-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES ?TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification ?HighbreakdownvoltagetechnologyforSiGeTr. ?3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2107M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD(1007PKG) FEATURES ?2differentbuilt-intransistors(2SC5435,NESG2107M33) Q1:Highgaintransistor fT=12.0GHzTYP.,?S21e?2=11dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inl

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NESG2107M33

NPN SILICON SiGe RF TWIN TRANSISTOR

NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD(1007PKG) FEATURES ?2differentbuilt-intransistors(2SC5436,NESG2107M33) Q1:Highgaintransistor fT=12GHzTYP.,?S21e?2=9.0dBTYP.@VCE=1V,IC=10mA,f=2GHz Q2:Built-inlo

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    NES

  • 制造商:

    Altech Corporation

  • 類別:

    電路保護(hù) > 配件

  • 包裝:

    散裝

  • 描述:

    BUSBAR SUPP W FIXING SCREW(50

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更多NES供應(yīng)商 更新時(shí)間2025-4-21 16:20:00