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NP86N04NHE-S18-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP86N04NHE-S18-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.4mΩMAX.(VGS=10V,ID=43A) ?Lowinputcapacitance Ciss=5900pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04CHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04CHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04CHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP88N04CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04CHE-S12-AZ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04DHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pFTYP. ?Built-ingateprotectiondiode

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP88N04DHE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=4.3mΩMAX.(VGS=10V,ID=44A) ?Lowinputcapacitance Ciss=7300pF

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP88N04DHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=88A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP8

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
24+
TO-263
8866
詢價(jià)
NEC
6000
面議
19
TO-263
 詢價(jià)
R
24+
TO263
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
NEC
TO-263
22+
6000
十年配單,只做原裝
 詢價(jià)
NEC
23+
TO-263
6000
原裝正品，支持實(shí)單
 詢價(jià)
RENESAS/瑞薩
23+
TO-263
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢價(jià)
RENESAS/瑞薩
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
12500
瑞薩全系列在售,終端可出樣品
 詢價(jià)
RENESAS/瑞薩
22+
TO-263
9000
專業(yè)配單,原裝正品假一罰十,代理渠道價(jià)格優(yōu)
 詢價(jià)
NEC
25+
TO-263
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
更多NP8供應(yīng)商 更新時(shí)間2025-4-24 15:52:00

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