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NP82N10PUF

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=15mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N10PUF-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP82N10PUFisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=15mΩMAX.(VGS=10V,ID=41A) ?LowCiss:Ciss=2900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotivea

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N10PUF-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP82N10PUFisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=15mΩMAX.(VGS=10V,ID=41A) ?LowCiss:Ciss=2900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotivea

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82P04PLF

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A) ?Lowinputcapacitance Cis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82P04PLF

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82P04PLF-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A) ?Lowinputcapacitance Cis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82P04PLF-E1-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82P04PLF-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A) ?Lowinputcapacitance Cis

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP82P04PLF-E2-AY

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION TheNP82P04PLFisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=8mΩMAX.(VGS=?10V,ID=?41A) RDS(on)2=12mΩMAX.(VGS=?4.5V,ID=?41A)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N03PUG

Product Scout Automotive

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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NEC
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8866
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NEC
6000
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NEC
2022+
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12888
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NEC
23+
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6000
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NEC
22+
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25000
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NEC
25+
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12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
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NEC
22+
SOT-263
20000
保證原裝正品,假一陪十
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NEC
23+
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33000
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NEC
22+
SOT-263
100000
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RENESAS/瑞薩
23+
TO-263
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
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更多NP82供應(yīng)商 更新時間2025-4-23 15:30:00

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