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NP82N06MLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06MLG

N-Channel 60 V (D-S) MOSFET

FEATURES ?175°CJunctionTemperature ?TrenchFET?PowerMOSFET ?Materialcategorization:

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

NP82N06MLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N06MLG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06NLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06NLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N06NLG-S18-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP82N06MLGandNP82N06NLGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES ?Logiclevel ?Built-ingateprotectiondiode ?Superlowon-stateresistance RDS(on)1=7.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=9.7

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP82N06PDG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N06PLG

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=82A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.7mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP82N10PUF

MOS FIELD EFFECT TRANSISTOR

Description TheNP82N10PUFisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance ?RDS(on)=15mΩMAX.(VGS=10V,ID=41A) ?LowCiss:Ciss=2900pFTYP.(VDS=25V,VGS=0V) ?Designedforautomotivea

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

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