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NTBG022N120M3S_V01

Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features ?Typ.RDS(on)=22m ?Lowswitchinglosses(Typ.EON485Jat40A,800V) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?UninterruptiblePowerSupplies(UPS) ?EnergyStorageSystems

ONSEMION Semiconductor

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NTBG022N120M3S_V02

Silicon Carbide (SiC) MOSFET - EliteSiC, 22mohm, 1200V, M3S, D2PAK-7L

Features ?Typ.RDS(on)=22m ?UltraLowGateCharge(QG(tot)=151nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=146pF) ?100AvalancheTested ?TheseDevicesareRoHSCompliant TypicalApplications ?SolarInverters ?ElectricVehicleChargingStations ?Uninterruptible

ONSEMION Semiconductor

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NTBG023N065M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 23mohm, 650 V, M3S, D2PAK-7L

Features ?TypicalRDS(ON)=23m@VGS=18V ?UltraLowGateCharge(QG(tot)=69nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=153pF) ?100%AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb?Free2LI(onSecondLevelInterconnection)

ONSEMION Semiconductor

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NTBG025N065SC1

Marking：BG025N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET - 19 mohm, 650V, M2, D2PAK-7L

Features ?Typ.RDS(on)=19m@VGS=18VTyp.RDS(on)=25m@VGS=15V ?UltraLowGateCharge(QG(tot)=164nC) ?LowOutputCapacitance(Coss=278pF) ?100AvalancheTested ?TJ=175°C ?RoHSCompliant TypicalApplications ?SMPS(SwitchingModePowerSupplies) ?SolarInv

ONSEMION Semiconductor

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NTBG028N170M1

Marking：BG028N170M1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET 28 m, 1700 V, M1, D2PAK-7L

Features ?Typ.RDS(on)=28m ?UltraLowGateCharge(typ.QG(tot)=222nC) ?LowEffectiveOutputCapacitance(typ.Coss=200pF) ?100AvalancheTested ?RoHSCompliant TypicalApplications ?UPS ?DC/DCConverter ?BoostConverter

ONSEMION Semiconductor

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NTBG030N120M3S

Marking：BG030N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – EliteSiC, 29mohm, 1200V, M3S, D2PAK-7L

Features ?Typ.RDS(on)=29m@VGS=18V ?UltraLowGateCharge(QG(tot)=107nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=106pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typical

ONSEMION Semiconductor

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NTBG032N065M3S

Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L

Features ?TypicalRDS(ON)=32m@VGS=18V ?UltraLowGateCharge(QG(tot)=55nC) ?HighSpeedSwitchingwithLowCapacitance(Coss=113pF) ?100%AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb?Free2LI(onSecondLevelInterconnection)

ONSEMION Semiconductor

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NTBG040N120M3S

Marking：BG040N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M3S, D2PAK-7L

Features ?Typ.RDS(on)=40m@VGS=18V ?UltraLowGateCharge(QG(TOT)=75nC) ?HighSpeedSwitchingwithLowCapacitance(COSS=80pF) ?100AvalancheTested ?ThisDeviceisHalideFreeandRoHSCompliantwithExemption7a, Pb?Free2LI(onSecondLevelInterconnection) TypicalA

ONSEMION Semiconductor

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NTBG040N120SC1

Silicon Carbide (SiC) MOSFET – 40 mohm, 1200V, M1, D2PAK-7

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

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NTBG040N120SC1

Silicon Carbide (SiC) MOSFET – EliteSiC, 40mohm, 1200V, M1, D2PAK-7

Features ?Typ.RDS(on)=40m ?UltraLowGateCharge(Typ.QG(tot)=106nC) ?LowEffectiveOutputCapacitance(Typ.Coss=139pF) ?100AvalancheTested ?TJ=175°C ?ThisDeviceisHalideFreeandRoHSCompliantwithexemption7a, Pb?Free2LI(onsecondlevelinterconnection) Typ

ONSEMION Semiconductor

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詳細(xì)參數(shù)

  • 型號：

    NTB

  • 功能描述：

    MOSFET 24V 125A N-Channel

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
23+
TO-263
35890
詢價
ONSEMICONDUCTOR
24+
570
詢價
ON
12+
TO-263
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
 詢價
ONSEMICONDU
24+
原裝進(jìn)口原廠原包接受訂貨
2866
原裝現(xiàn)貨假一罰十
 詢價
ON
23+
TO-263-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
ON
24+
TO-263
90000
一級代理商進(jìn)口原裝現(xiàn)貨、價格合理
 詢價
ON
6000
面議
19
DIP/SMD
 詢價
ON/安森美
23+
SOT-263
24190
原裝正品代理渠道價格優(yōu)勢
 詢價
ON
1709+
SOT-263
32500
普通
 詢價
ON/安森美
2447
D2PAK
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
更多NTB供應(yīng)商 更新時間2025-4-22 17:53:00

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