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NTE996

Linear Integrated Circuit Operational Transconductance Amplifier

Description: TheNTE996isaprogrammabletransconductanceblockintendedtofulfillawidevarietyofvariablegainapplications.Thisdevicehasdifferentialinputsandhighimpedancepush–pulloutputs.TheNTE996hashighinputimpedanceanditstransconductance(gm)isdirectlyproportionalt

NTE

NTE Electronics

AN-996

UsingtheFairchildFSTBusSwitchasa5Vto3VTranslator

Introduction FairchildFSTBusSwitchescanbeusedforbi-directionaltranslators.Theycaninterface5Vcomponentsto3Vcomponentswithnegligiblepropagationdelay(tPD≤250ps)andminimalpowerdissipation(ICC≤10μA). Asthenumberofsystemsthatinterfacebetween5Vand3.3Vlevelsinc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BF996S

N-channeldual-gateMOS-FET

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BF996S

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF996S

N-channeldual-gateMOS-FET

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF996S

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features ●Integratedgateprotectiondiodes ●Lownoisefigure ●Lowfeedbackcapacitance ●Highcrossmodulationperformance ●Lowinputcapacitance ●HighAGC-range Applications InputandmixerstagesinUHFtuner.

Temic

TEMIC Semiconductors

BF996S

SiliconNChannelMOSFETTetrode(ForinputstagesinUHFTVtunersHightransconductanceLownoisefigure)

SiliconNChannelMOSFETTetrode ●ForinputstagesinUHFTVtuners ●Hightransconductance ●Lownoisefigure

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BF996S

N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF996SA

N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF996SB

N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

替換型號(hào)

詳細(xì)參數(shù)

  • 型號(hào)：

    NTE996

  • 制造商：

    NTE Electronics

  • 功能描述：

    Bulk

  • 功能描述：

    Operational Transconductance Amplifier

  • 功能描述：

    DIP-8 OP TRANDUC AMP

  • 功能描述：

    SP Amp Transconductance Amplifier Single ±18V 8-Pin PDIP

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
新
5
全新原裝 貨期兩周
 詢價(jià)
2022+
1
全新原裝 貨期兩周
 詢價(jià)
GPS
23+
CDIP
1215
專業(yè)優(yōu)勢(shì)供應(yīng)
 詢價(jià)
NTE
22+
NA
500000
萬(wàn)三科技,秉承原裝,購(gòu)芯無憂
 詢價(jià)
TI
22+
VQFN
9850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價(jià)
NTE
23+
原廠封裝
90000
一定原裝正品
 詢價(jià)
NTE
600
普通
 詢價(jià)
ON/安森美
2021+
QFN
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
 詢價(jià)
ON(安森美)
22+
NA
8000
原廠原裝現(xiàn)貨
 詢價(jià)
ON(安森美)
23+
標(biāo)準(zhǔn)封裝
8000
正規(guī)渠道,只有原裝!
 詢價(jià)
更多NTE996供應(yīng)商 更新時(shí)間2025-2-11 16:06:00

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