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AN-996

UsingtheFairchildFSTBusSwitchasa5Vto3VTranslator

Introduction FairchildFSTBusSwitchescanbeusedforbi-directionaltranslators.Theycaninterface5Vcomponentsto3Vcomponentswithnegligiblepropagationdelay(tPD≤250ps)andminimalpowerdissipation(ICC≤10μA). Asthenumberofsystemsthatinterfacebetween5Vand3.3Vlevelsinc

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

BF996S

RFManual16thedition

Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp

nxpNXP Semiconductors

恩智浦恩智浦半導(dǎo)體公司

BF996S

N-channeldual-gateMOS-FET

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

BF996S

N-ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

Features ●Integratedgateprotectiondiodes ●Lownoisefigure ●Lowfeedbackcapacitance ●Highcrossmodulationperformance ●Lowinputcapacitance ●HighAGC-range Applications InputandmixerstagesinUHFtuner.

Temic

TEMIC Semiconductors

BF996S

SiliconNChannelMOSFETTetrode(ForinputstagesinUHFTVtunersHightransconductanceLownoisefigure)

SiliconNChannelMOSFETTetrode ●ForinputstagesinUHFTVtuners ●Hightransconductance ●Lownoisefigure

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

BF996S

N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF996S

N-channeldual-gateMOS-FET

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

錦美電子泉州錦美電子有限公司

BF996SA

N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

BF996SB

N.ChannelDualGateMOS-FieldeffectTetrode,DepletionMode

DESCRIPTION Depletiontypefield-effecttransistorinaplasticSOT143microminiaturepackagewithinterconnectedsourceandsubstrate. FEATURES ?Protectedagainstexcessiveinputvoltagesurgesbyintegratedback-to-backdiodesbetweengatesandsource. APPLICATIONS ?RFapplicationssucha

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

F996

ATOBladeFuseRated32V

Littelfuselittelfuse

力特力特公司

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SOT23-6
6528
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代理TCH
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9800
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更多TCG996供應(yīng)商 更新時(shí)間2025-2-10 16:09:00

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