首頁(yè)>RFL1N20L>規(guī)格書(shū)詳情

RFL1N20L中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

RFL1N20L
廠商型號(hào)

RFL1N20L

功能描述

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

文件大小

92.71 Kbytes

頁(yè)面數(shù)量

2 頁(yè)

生產(chǎn)廠商 New Jersey Semi-Conductor Products, Inc.
企業(yè)簡(jiǎn)稱

NJSEMI新澤西半導(dǎo)體

中文名稱

新澤西半導(dǎo)體產(chǎn)品股份有限公司官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-3-24 19:52:00

人工找貨

RFL1N20L價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨

RFL1N20L規(guī)格書(shū)詳情

The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers. This performance Isaccomplished through a special gate oxide design which provides full rated conduction at gate biases In the 3-5 volt range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

Features:

■ Design optimized lor 5 volt gale drive

■ Can {>8 driven directly from Q-MOS, N-MOS, TTL Circuits

■ Compatible with automotive drive requirements

■ SOA ispower-dissipation limited

■ Nanosecond switching speeds

■ Linear transfer characteristics

■ High Input impedance

■ Majority carrier device

產(chǎn)品屬性

  • 型號(hào):

    RFL1N20L

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1A I(D) | TO-39

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
NF
23+
MICROBGA
19726
詢價(jià)
HARRIS(哈利斯)
20+
TO-205AF(TO-39)
3000
詢價(jià)
HAR
23+
RFL1P08
13528
振宏微原裝正品,假一罰百
詢價(jià)
H
24+
CAN
66800
原廠授權(quán)一級(jí)代理,專注汽車、醫(yī)療、工業(yè)、新能源!
詢價(jià)
FSL
24+
SMD
2789
全新原裝自家現(xiàn)貨!價(jià)格優(yōu)勢(shì)!
詢價(jià)
ISL
TO78
3751
專營(yíng)CAN鐵帽仔
詢價(jià)
HARRIS
23+24
TO78
9860
原廠原包裝。終端BOM表可配單??砷_(kāi)13%增值稅
詢價(jià)
HARRIS
24+
CAN
4650
詢價(jià)
HAR
23+
CAN
3557
優(yōu)勢(shì)庫(kù)存
詢價(jià)
INTERSIL
CAN3
8650
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨
詢價(jià)