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SPA07N65C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA07N65C3

Marking:07N65C3;Package:PG-TO220-3;Cool MOS Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ●PG-TO-220-3:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScompliant ?Quali

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA07N65C3

isc N-Channel MOSFET Transistor

?FEATURES ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA08N50C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?PG-TO-220-3-31;-3-111:Fullyisolatedpackage(2500VAC;1minute) ?Pb-freeleadplating;RoHScomp

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA08N50C3

Isc N-Channel MOSFET Transistor

?FEATURES ?DrainCurrentID=7.6A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA08N80C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA08N80C3

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA-1118

850 MHz 1 Watt Power Amplifier with Active Bias

ProductDescription SirenzaMicrodevices’SPA-1118isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableandc

SIRENZA

SIRENZA MICRODEVICES

SPA-1118Z

850 MHz 1 Watt Power Amplifier with Active Bias

ProductDescription SirenzaMicrodevices’SPA-1118isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableandc

SIRENZA

SIRENZA MICRODEVICES

SPA11N60C2

Marking:11N60C2;Package:P-TO220-3-31;Cool MOS??Power Transistor

Feature 1.Newrevolutionaryhighvoltagetechnology 2.Ultralowgatecharge 3.Periodicavalancherated 4.Extremedv/dtrated 5.Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細參數(shù)

  • 型號:

    SPA

  • 制造商:

    CRYDOM

  • 制造商全稱:

    Crydom Inc.,

  • 功能描述:

    PCB Mount

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更多SPA供應(yīng)商 更新時間2025-4-15 15:08:00