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SPA-1218

1960 MHz 1 Watt Power Amplifier with Active Bias

ProductDescription SirenzaMicrodevices’SPA-1218isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableandc

SIRENZA

SIRENZA MICRODEVICES

SPA12N50C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA12N50C3

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-220FPackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA13003

NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications

NPNTripleDiffusedPlanarSiliconTransistor Features ?Highbreakdownvoltage. ?High-speedswitching. ?WideASO. ?AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋電機株式會社

SPA-1318

2150 MHz 1 Watt Power Amplifier with Active Bias

ProductDescription StanfordMicrodevicesa€?SPA-1318isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliablean

STANFORD

Stanford Microdevices

SPA-1318

2150 MHz 1 Watt Power Amplifier with Active Bias

ProductDescription SirenzaMicrodevicesa€?SPA-1318isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableand

SIRENZA

SIRENZA MICRODEVICES

SPA15N60C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA15N60C3

isc N-Channel MOSFET Transistor

?DESCRITION ?HighfastswitchingPowerSupply ?FEATURES ?Drain-sourceon-resistance:RDS(on)≤0.28?@10V ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA15N60CFD

CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode

Features ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: ?SoftswitchingPWMStages ?LCD&CRTTV

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA15N60CFD

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號：

    SPA

  • 制造商：

    CRYDOM

  • 制造商全稱：

    Crydom Inc.,

  • 功能描述：

    PCB Mount

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
QFP
2
詢價
SIRENZA
24+
SOF-26
6868
原裝現(xiàn)貨,可開13%稅票
 詢價
INFINEON
TO220F
10000
原裝長期供貨!
 詢價
AMS
24+
PLCC
5000
只做原裝公司現(xiàn)貨
 詢價
Analog
21+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
 詢價
24+
SMD
7500
十年品牌!原裝現(xiàn)貨!!!
 詢價
NEC
24+
200
進口原裝正品優(yōu)勢供應(yīng)
 詢價
NEC
24+
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價
Infineon/英飛凌
24+
PG-TO220FP
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
RFMD
2016+
SMT6
9000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
更多SPA供應(yīng)商 更新時間2025-4-15 13:30:00

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