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SPA20N60C3

isc N-Channel MOSFET Transistor

?FEATURES ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Highpeakcurrentcapability ?Improvedtransconductance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA20N60CFD

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplication

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPA20N60CFD

CoolMOS Power Transistor

Features ?Newrevolutionaryhighvoltagetechnology ?Intrinsicfast-recoverybodydiode ?Extremelylowreverserecoverycharge ?Ultralowgatecharge ?Extremedv/dtrated ?Highpeakcurrentcapability ?Periodicavalancherated ?Qualifiedforindustrialgradeapplicationsaccording

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA20N65C3

Marking:20N65C3;Package:TO-220FP;Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Highpeakcurrentcapability ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJEDEC0

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA-2118

850 MHz 1 Watt Power Amplifier with Active Bias

ProductDescription SirenzaMicrodevices’SPA-2118isahighefficiencyGaAs HeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableand

SIRENZA

SIRENZA MICRODEVICES

SPA21N50C3

Cool MOS??Power Transistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA-2318

1700-2200 MHz 1 Watt Power Amp with Active Bias

ProductDescription SirenzaMicrodevices’SPA-2318isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableandc

SIRENZA

SIRENZA MICRODEVICES

SPA-2318

2150 MHz 1 Watt Power Amplifier with Active Bias

ProductDescription StanfordMicrodevices’SPA-2318isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableand

STANFORD

Stanford Microdevices

SPA-2318Z

1700-2200 MHz 1 Watt Power Amp with Active Bias

ProductDescription SirenzaMicrodevices’SPA-2318isahighefficiencyGaAsHeterojunctionBipolarTransistor(HBT)amplifierhousedinalow-costsurface-mountableplasticpackage.TheseHBTamplifiersarefabricatedusingmolecularbeamepitaxialgrowthtechnologywhichproducesreliableandc

SIRENZA

SIRENZA MICRODEVICES

SPA25

25 amp single phase bridge rectifiers

MicrosemiMicrosemi Corporation

美高森美美高森美公司

詳細(xì)參數(shù)

  • 型號:

    SPA

  • 制造商:

    CRYDOM

  • 制造商全稱:

    Crydom Inc.,

  • 功能描述:

    PCB Mount

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MOT
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QFP
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絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購!
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十年品牌!原裝現(xiàn)貨!!!
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INFINEON
23+
TO-220
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
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更多SPA供應(yīng)商 更新時間2025-4-21 17:58:00