STF21NM60N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=17A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.22Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STF21P6LLF6

Marking：21P6LLF6；Package：TO-220FP；P-channel -60 V, 25.5 mΩ typ., -21 A STripFET? F6 Power MOSFET in a TO-220FP package

Features ?Verylowon-resistance ?Verylowgatecharge ?Highavalancheruggedness ?Lowgatedrivepowerloss Applications ?Switchingapplications Description ThisdeviceisaP-channelPowerMOSFET developedusingtheSTripFET?F6technology, withanewtrenchgatestructure.Th

STF2222A

SMALL SIGNAL NPN TRANSISTOR

SMALLSIGNALNPNTRANSISTOR ■SILICONEPITAXIALPLANARNPNTRANSISTOR ■MINIATURESOT-89PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPE&REELPACKING ■THEPNPCOMPLEMENTARYTYPEISSTF2907A APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLLOADSWITCHTRANSISTORWITHH

STF22N60DM6

N-channel 600 V, 200 m typ., 15 A, MDmesh DM6 Power MOSFET in a TO?220FP package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM

STF22N60M6

N-channel 600 V, 196 m typ., 15 A, MDmeshTM M6 Power MOSFET in a TO-220FP package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

STF22NM60

N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh??ower MOSFET

DESCRIPTION ThisimprovedversionofMDmesh?whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STF22NM60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.25Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STF22NM60N

N-channel 600 V, 0.2 廓, 16 A MDmesh??II Power MOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STF22NM60ND

Marking：22NM60ND；Package：TO-220FP；Automotive-grade N-channel 600 V, 0.17 ??typ., 17 A FDmesh??II Power MOSFET in a TO-220FP package

Description ThisFDmesh?IIPowerMOSFETwithfastrecoverybodydiodeisproducedusingMDmesh?IItechnology.Utilizinganewstriplayoutverticalstructure,thisdevicefeatureslowon-resistanceandsuperiorswitchingperformance.ItisidealforbridgetopologiesandZVSphase-shiftconverter

STF-22-S1

Q-Band Faraday Isolator

FEATURES FullWaveguideBandOperation ModerateInsertionLoss HighIsolation InstrumentationGrade APPLICATIONS TestLabs Instrumentations Sub-assemblies