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STF26NM60N

isc N-Channel MOSFET Transistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=20A@TC=25℃ ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=165mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableopera

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF26NM60ND

Low input capacitance and gate charge

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF26NM60N-H

Marking：26NM60N；Package：TO-220FP；N-channel 600 V, 0.135 ?? 20 A MDmesh??II Power MOSFET in TO-220FP

Description ThisseriesofdevicesimplementssecondgenerationMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemandingh

STMICROELECTRONICSSTMicroelectronics

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STF-28-91

Ka-Band Faraday Isolator, 90° Twist Input

Description: ModelSTF-28-91isafullbandFaradayisolatorthatoperatesfrom26.5to40GHz.TheFaradayisolatorisconstructedwithalongitudinal,magnetizedferriterodthatcausesaFaradayrotationoftheincomingRFsignal.TheFaradayisolatoroffers30dBtypicalisolationanda1.2d

ERAVANT

Eravant

STF28NM50N

N-channel Power MOSFETs developed using the second generation of MDmesh

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF28NM60ND

Marking：28NM60ND；Package：TO-220FP；N-channel 600 V, 0.13 廓 typ., 23 A FDmesh??II Power MOSFETs in D?PAK, TO-220FP, TO-220 and TO-247 packages

Description TheseFDmesh?IIPowerMOSFETswithintrinsicfast-recoverybodydiodeareproducedusingthesecondgenerationofMDmesh?technology.Utilizinganewstrip-layoutverticalstructure,theserevolutionarydevicesfeatureextremelylowon-resistanceandsuperiorswitchingperformance.T

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF-28-S1

Ka-Band Faraday Isolator

Description: ModelSTF-28-S1isafullbandFaradayisolatorthatoperatesfrom26.5to40GHz.TheFaradayisolatorisconstructedwithalongitudinal,magnetizedferriterodthatcausesaFaradayrotationoftheincomingRFsignal.TheFaradayisolatoroffers30dBtypicalisolationanda1.2d

ERAVANT

Eravant

STF2907

SMALL SIGNAL PNP TRANSISTOR

SMALLSIGNALPNPTRANSISTOR ■SILICONEPITAXIALPLANARPNPTRANSISTOR ■MINIATURESOT-89PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPE&REELPACKING ■THENPNCOMPLEMENTARYTYPEISSTF2222A APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLLOADSWITCHTRANSIS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF2907A

SMALL SIGNAL PNP TRANSISTOR

SMALLSIGNALPNPTRANSISTOR ■SILICONEPITAXIALPLANARPNPTRANSISTOR ■MINIATURESOT-89PLASTICPACKAGEFORSURFACEMOUNTINGCIRCUITS ■TAPE&REELPACKING ■THENPNCOMPLEMENTARYTYPEISSTF2222A APPLICATIONS ■WELLSUITABLEFORPORTABLEEQUIPMENT ■SMALLLOADSWITCHTRANSIS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STF2HNK60Z

N-CHANNEL 600V - 4.4廓 - 2.0A TO-92/TO-220FP/IPAK Zener-Protected SuperMESH MOSFET

Description TheSuperMESH?seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstripbasedPowerMESH?layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplication. Suchseri

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號(hào)：

    STF

  • 制造商：

    PREMO

  • 制造商全稱(chēng)：

    PREMO CORPORATION S.L

  • 功能描述：

    Three Phase+Neutral Filters For Solar Technology Applications

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