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STF24N60M2

N-channel 600 V, 0.168 typ., 18 A MDmesh II Plus low Qg Power MOSFET in TO-220FP and I2PAKFP packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STMICROELECTRONICSSTMicroelectronics

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STF24N60M6

N-channel 600 V, 162 m typ., 17 A, MDmeshTM M6 Power MOSFET in a TO-220FP package

Features ?Reducedswitchinglosses ?LowerRDS(on)perareavspreviousgeneration ?Lowgateinputresistance ?100avalanchetested ?Zener-protected Description ThenewMDmesh?M6technologyincorporatesthemostrecentadvancementsto thewell-knownandconsolidatedMDmeshfamilyof

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STF24NM65N

N-channel 650 V - 0.16 廓 - 19 A - TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

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STF25N10F7

Ultra low on-resistance

Description Thesedevicesutilizethe7thgenerationofdesignrulesofST’sproprietarySTripFET?technology,withanewgatestructure.TheresultingPowerMOSFETexhibitsthelowestRDS(on)inallpackages. Features ?Ultralowon-resistance ?100avalanchetested Applications ?Switchin

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STF25N80K5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=19.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.26Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF25NM50N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF25NM60N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=20A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.17Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

STF260N4F7

Marking：260N4F7；Package：TO-220FP；N-channel 40 V, 1.95 mΩ typ., 90 A, STripFET? F7 Power MOSFET in a TO-220FP package

Features ?AmongthelowestRDS(on)onthemarket ?Excellentfigureofmerit(FoM) ?LowCrss/CissratioforEMIimmunity ?Highavalancheruggedness Applications ?Switchingapplications Description ThisN-channelPowerMOSFETutilizes STripFET?F7technologywithanenhanced trenc

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STF26N65DM2

N-channel 650 V, 0.156 typ., 20 A, MDmeshTM DM2 Power MOSFET in a TO-220FP package

Features ?Fast-recoverybodydiode ?Extremelylowgatechargeandinputcapacitance ?Lowon-resistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmesh?DM2fastrecovery diodeseries.

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STF26NM60N

N-channel 600 V, 0.135 ohm typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETappliesanewverticalstructuretothecompany’sstriplayouttoyieldadevicewithoneoftheworld’sloweston-resistanceandgatecharge,making

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詳細(xì)參數(shù)

  • 型號(hào)：

    STF

  • 制造商：

    PREMO

  • 制造商全稱(chēng)：

    PREMO CORPORATION S.L

  • 功能描述：

    Three Phase+Neutral Filters For Solar Technology Applications

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SEMTECH
24+
SC70-5L
4897
絕對(duì)原裝!現(xiàn)貨熱賣(mài)!
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SEMFEON
16+
NA
8800
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ON
24+
SMD
12000
原廠(chǎng)/代理渠道價(jià)格優(yōu)勢(shì)
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ST
23+
TO-220F
8795
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ST
17+
TO-220
6200
100%原裝正品現(xiàn)貨
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SIGMATEL
24+
QFN
2685
原裝優(yōu)勢(shì)!自家現(xiàn)貨供應(yīng)!歡迎來(lái)電!
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三年內(nèi)
1983
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SEMTECH
20+
SC-70-5L
36800
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ST
2020+
to-220
9500
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STM
08+
6500
普通
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更多STF供應(yīng)商 更新時(shí)間2025-4-1 15:34:00

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