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UPA806

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES ?LowNoise,HighGain ?OperableatLowVoltage ?SmallFeed-backCapacitanceCre=0.4pFTYP. ?Built-in2Transistors(2×2SC4959)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA806T

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES ?LowNoise,HighGain ?OperableatLowVoltage ?SmallFeed-backCapacitanceCre=0.4pFTYP. ?Built-in2Transistors(2×2SC4959)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA806T

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES ?LowNoise,HighGain ?OperableatLowVoltage ?SmallFeed-backCapacitanceCre=0.4pFTYP. ?Built-in2Transistors(2×2SC4959)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA806T-T1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

FEATURES ?LowNoise,HighGain ?OperableatLowVoltage ?SmallFeed-backCapacitanceCre=0.4pFTYP. ?Built-in2Transistors(2×2SC4959)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA806T-T1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES ?LowNoise,HighGain ?OperableatLowVoltage ?SmallFeed-backCapacitanceCre=0.4pFTYP. ?Built-in2Transistors(2×2SC4959)

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA807

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES ?LowCurrent,HighGain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz ?ASuperMiniMoldPackageAdopted ?Built-in2Transistors(2×2SC5179)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA807T

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES ?LowCurrent,HighGain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz ?ASuperMiniMoldPackageAdopted ?Built-in2Transistors(2×2SC5179)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA807T

SILICON TRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2ELEMENTS)SUPERMINIMOLD FEATURES ?LowCurrent,HighGain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz ?ASuperMiniMoldPackageAdopted ?Bu

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

UPA807T-T1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES ?LowCurrent,HighGain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz ?ASuperMiniMoldPackageAdopted ?Built-in2Transistors(2×2SC5179)

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

UPA807T-T1

SILICON TRANSISTOR

MICROWAVELOWNOISEAMPLIFIER NPNSILICONEPITAXIALTRANSISTOR (WITHBUILT-IN2ELEMENTS)SUPERMINIMOLD FEATURES ?LowCurrent,HighGain |S21e|2=9dBTYP.@VCE=2V,IC=7mA,f=2GHz |S21e|2=8.5dBTYP.@VCE=1V,IC=5mA,f=2GHz ?ASuperMiniMoldPackageAdopted ?Bu

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    UPA80

  • 制造商：

    NEC

  • 制造商全稱：

    NEC

  • 功能描述：

    HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
NEC
2016+
SOT363
19400
只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!
 詢價(jià)
NEC
24+
SOT-363/SOT-323-6
7952
新進(jìn)庫(kù)存/原裝
 詢價(jià)
NEC
23+
SC70-6
12000
全新原裝優(yōu)勢(shì)
 詢價(jià)
NEC
1708+
SO6
12500
只做原裝進(jìn)口,假一罰十
 詢價(jià)
NEC
22+
SO6
8200
全新進(jìn)口原裝現(xiàn)貨
 詢價(jià)
MINI
24+
SMD其他電子元
17
一級(jí)代理全新原裝現(xiàn)貨
 詢價(jià)
SOT-363
23+
NA
15659
振宏微專業(yè)只做正品,假一罰百!
 詢價(jià)
NEC
25+23+
SC70-6
78416
絕對(duì)原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價(jià)
NEC
23+
SC70-6
999999
原裝正品現(xiàn)貨量大可訂貨
 詢價(jià)
NEC
19+
SC70-6
20000
5000
 詢價(jià)
更多UPA80供應(yīng)商 更新時(shí)間2025-4-14 13:23:00

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