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2SK3466

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK3467

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3467isN-ChannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchas DC/DCconverterwithsynchronousrectifier. F

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3467

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The2SK3467isN-ChannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES ?4.5Vdriveavailable ?Lowon-state

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3467

MOS Field Effect Transistor

Features ?4.5Vdriveavailable ?Lowon-stateresistance RDS(on)1=6.0mMAX.(VGS=10V,ID=40A) ?Lowgatecharge QG=55nCTYP.(ID=80A,VDD=16V,VGS=10V) ?Built-ingateprotectiondiode ?Surfacemountdeviceavailable

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3467-ZK

SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE

DESCRIPTION The2SK3467isN-ChannelMOSFETdevicethatfeaturesalowon-stateresistanceandexcellentswitchingcharacteristics,designedforlowvoltagehighcurrentapplicationssuchasDC/DCconverterwithsynchronousrectifier. FEATURES ?4.5Vdriveavailable ?Lowon-state

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3467-ZK

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET INDUSTRIALUSE DESCRIPTION The2SK3467isN-ChannelMOSFETdevicethatfeaturesa lowon-stateresistanceandexcellentswitchingcharacteristics, designedforlowvoltagehighcurrentapplicationssuchas DC/DCconverterwithsynchronousrectifier. F

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3471

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

SwitchingRegulatorandDC-DCConverterApplications ?Lowdrain-sourceON-resistance:RDS(ON)=10?(typ.) ?Highforwardtransferadmittance:|Yfs|=0.4S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) ?Enhancementmodel:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK3471

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK3472

Switching Regulator Applications

SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=4.0m?(typ.) ?Highforwardtransferadmittance:|Yfs|=0.8S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=450V) ?Enhancementmodel:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

2SK3472

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

詳細(xì)參數(shù)

  • 型號(hào):

    2SK34

  • 功能描述:

    2SK34

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NEC
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SOT-263
211
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HIT
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TO-263
90000
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TOSHIBA
12+
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2500
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MITSUBIS
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Renesas
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NEC
24+
4326
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20000
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅??!
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更多2SK34供應(yīng)商 更新時(shí)間2025-4-10 16:30:00