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2SK3480-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=10V,ID=25A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=25A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3480-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31m?MAX.(VGS=10V,ID=25A) RDS(on)2=36m?MAX.(VGS=4.5V,ID=25A) ?LowCiss:Ciss=3600pFTYP. ?B

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3480-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=10V,ID=25A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=25A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3480-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31m?MAX.(VGS=10V,ID=25A) RDS(on)2=36m?MAX.(VGS=4.5V,ID=25A) ?LowCiss:Ciss=3600pFTYP. ?B

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3480-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=10V,ID=25A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=25A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3481

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50m?MAX.(VGS=10V,ID=15A) RDS(on)2=58m?MAX.(VGS=4.5V,ID=15A) ?LowCiss:Ciss=2300pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3481

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) ●LowCiss:Ciss=2300pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3481

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3481-S

SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50m?MAX.(VGS=10V,ID=15A) RDS(on)2=58m?MAX.(VGS=4.5V,ID=15A) ?LowCiss:Ciss=2300pFTYP. ?

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3481-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3481isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=50mΩMAX.(VGS=10V,ID=15A) RDS(on)2=58mΩMAX.(VGS=4.5V,ID=15A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    2SK34

  • 功能描述：

    2SK34

供應(yīng)商型號品牌批號封裝庫存備注價格
MIT
24+
3005
詢價
MITSUBISHI
2023+
to-92
8700
原裝現(xiàn)貨
 詢價
TOSHIBA
24+/25+
1996
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
TOS
13+
TO-92S
561238
原裝分銷
 詢價
MITSUBIS
23+
TO-57
350
專營高頻管模塊,全新原裝!
 詢價
TOSHIBA
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
NEC
03+
TO263
2145
全新原裝進(jìn)口自己庫存優(yōu)勢
 詢價
NEC
24+
TO-220F
3000
全新原裝環(huán)?，F(xiàn)貨
 詢價
NEC
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價
NEC
24+
SOT-263
211
原裝現(xiàn)貨假一罰十
 詢價
更多2SK34供應(yīng)商 更新時間2025-4-25 16:30:00

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