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2SK3473

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK3473

Switching Regulator Applications

SwitchingRegulatorApplications ?Lowdrain-sourceONresistance:RDS(ON)=1.3?(typ.) ?Highforwardtransferadmittance:|Yfs|=6.5S(typ.) ?Lowleakagecurrent:IDSS=100μA(VDS=720V) ?Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID=1mA)

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK3475

VHF-and UHF-band Amplifier Applications

VHF-andUHF-bandAmplifierApplications (Note)TheTOSHIBAproductslistedinthisdocumentareintendedforhighfrequencyPowerAmplifieroftelecommunicationsequipment.TheseTOSHIBAproductsareneitherintendednorwarrantedforanyotheruse.DonotusetheseTOSHIBAproductslistedinthis

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK3475

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK3476

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

VHF-andUHF-bandAmplifierApplications (Note)TheTOSHIBAproductslistedinthisdocumentareintendedforhighfrequencyPowerAmplifieroftelecommunicationsequipment.TheseTOSHIBAproductsareneitherintendednorwarrantedforanyotheruse.DonotusetheseTOSHIBAproductslistedinthis

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK3476

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會社東芝

2SK3479

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3479

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=10V,ID=42A) RDS(on)2=13m?MAX.(VGS=4.5V,ID=42A) ?LowCiss:Ciss=11000pFTYP. ?Bu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

2SK3479

MOS Field Effect Transistor

FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=10V,ID=42A) RDS(on)2=13m?MAX.(VGS=4.5V,ID=42A) ?LowCiss:Ciss=11000pFTYP. ?Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

2SK3479-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    2SK34

  • 功能描述：

    2SK34

供應(yīng)商型號品牌批號封裝庫存備注價格
MIT
24+
3005
詢價
MITSUBISHI
2023+
to-92
8700
原裝現(xiàn)貨
 詢價
HIT
23+
原廠原裝
4000
全新原裝
 詢價
RENESAS
2016+
TO-252
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
MITSUBIS
23+
TO-57
350
專營高頻管模塊,全新原裝!
 詢價
TOSHIBA/東芝
24+
SC-62
6000
全新原裝深圳倉庫現(xiàn)貨有單必成
 詢價
TOSHIBA
23+
NA
8021
專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理QQ1304306553
 詢價
TOSHIBA/東芝
2022+
SC-62
7600
原廠原裝,假一罰十
 詢價
TOS
1134+
TO220
150
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
17
24+
TO-251
26
原裝現(xiàn)貨假一賠十
 詢價
更多2SK34供應(yīng)商 更新時間2025-4-11 16:30:00

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