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2SK3479-S

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3479-Z

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=10V,ID=42A) RDS(on)2=13m?MAX.(VGS=4.5V,ID=42A) ?LowCiss:Ciss=11000pFTYP. ?Bu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3479-Z

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3479-ZJ

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11mΩMAX.(VGS=10V,ID=42A) RDS(on)2=13mΩMAX.(VGS=4.5V,ID=42A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3479-ZJ

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3479isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=11m?MAX.(VGS=10V,ID=42A) RDS(on)2=13m?MAX.(VGS=4.5V,ID=42A) ?LowCiss:Ciss=11000pFTYP. ?Bu

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3480

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistor designedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31mΩMAX.(VGS=10V,ID=25A) RDS(on)2=36mΩMAX.(VGS=4.5V,ID=25A) ?L

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

2SK3480

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31m?MAX.(VGS=10V,ID=25A) RDS(on)2=36m?MAX.(VGS=4.5V,ID=25A) ?LowCiss:Ciss=3600pFTYP. ?B

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

2SK3480

MOS Field Effect Transistor

Features ●Superlowon-stateresistance: RDS(on)1=31mMAX.(VGS=10V,ID=25A) RDS(on)2=36mMAX.(VGS=4.5V,ID=25A) ●LowCiss:Ciss=3600pFTYP. ●Built-ingateprotectiondiode

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

2SK3480

N-Channel 100-V (D-S) MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

2SK3480-S

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The2SK3480isN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance: RDS(on)1=31m?MAX.(VGS=10V,ID=25A) RDS(on)2=36m?MAX.(VGS=4.5V,ID=25A) ?LowCiss:Ciss=3600pFTYP. ?B

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    2SK34

  • 功能描述：

    2SK34

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
MIT
24+
3005
詢價(jià)
MITSUBISHI
2023+
to-92
8700
原裝現(xiàn)貨
 詢價(jià)
TOSHIBA
24+/25+
1996
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
TOS
13+
TO-92S
561238
原裝分銷
 詢價(jià)
MITSUBIS
23+
TO-57
350
專營高頻管模塊,全新原裝!
 詢價(jià)
TOSHIBA
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價(jià)
NEC
03+
TO263
2145
全新原裝進(jìn)口自己庫存優(yōu)勢(shì)
 詢價(jià)
NEC
24+
TO-220F
3000
全新原裝環(huán)?，F(xiàn)貨
 詢價(jià)
NEC
16+
TO-220
10000
全新原裝現(xiàn)貨
 詢價(jià)
NEC
24+
SOT-263
211
原裝現(xiàn)貨假一罰十
 詢價(jià)
更多2SK34供應(yīng)商 更新時(shí)間2025-4-25 16:30:00

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