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D1N20

General Purpose Rectifiers(200V 1A)

FEATURES ●Highvoltage ●Highreliabilitywithsuperiormoistureresistance ●5mmpitchmountingapplicable APPLICATION ●ConventionalRectification ●Powersource(PowerSupply) ●HomeAppliances,OfficeEquipment ●Telecommunication,FactoryAutomation

SHINDENGENShindengen Electric Mfg.Co.Ltd

日本新電元工業(yè)株式會社

N1N20

N-channel200V,1.2?,1A,SOT-223MESHOVERLAY?PowerMOSFET

Description ThisdeviceisanN-channelPowerMOSFET developedusingthelatesthighvoltageMESH OVERLAY?process.ThenewpatentedSTrip layoutcoupledwiththecompany’sproprietary edgeterminationstructure,makesitsuitablein convertersforlightingapplications. Features ■100a

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

RFL1N20

1A,180Vand200V,3.65Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive

Intersil

Intersil Corporation

RFL1N20

1A,180Vand200V,3.65Ohm,N-ChannelPowerMOSFETs

Description TheseareN-channelenhancementmodesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drive

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFL1N20L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

TheRFL1N18LandRFL1N20LandtheRFP2N18LandRFP2N20Laren-channelenhancement-modesilicon-gatepower,field-effecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesInapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFL1N20L

N-ChannelLogicLevelPowerField-EffectTransistors(L2FET)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

SST1N20-C

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

STN1N20

N-channel200V,1.2?,1A,SOT-223MESHOVERLAY?PowerMOSFET

Description ThisdeviceisanN-channelPowerMOSFET developedusingthelatesthighvoltageMESH OVERLAY?process.ThenewpatentedSTrip layoutcoupledwiththecompany’sproprietary edgeterminationstructure,makesitsuitablein convertersforlightingapplications. Features ■100a

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

STN1N20

N-CHANNEL200V-1.2ohm-1A-SOT-223POWERMOSTRANSISTOR

N-CHANNEL200V-1.2?-1A-SOT-223POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.2? ■AVALANCHERUGGEDTECHNOLOGY ■SOT-223CANBEWAVEORREFLOWSOLDERED ■AVAILABLEINTAPEANDREELONREQUEST ■150°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HARDDI

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

詳細(xì)參數(shù)

  • 型號：

    D1N20

  • 功能描述：

    整流器 Single Diode

  • RoHS：

    否

  • 制造商：

    Vishay Semiconductors

  • 產(chǎn)品：

    Standard Recovery Rectifiers

  • 反向電壓：

    100 V

  • 恢復(fù)時間：

    1.2 us

  • 正向連續(xù)電流：

    2 A

  • 最大浪涌電流：

    35 A 反向電流

  • IR：

    5 uA

  • 安裝風(fēng)格：

    SMD/SMT

  • 封裝/箱體：

    DO-221AC

  • 封裝：

    Reel

供應(yīng)商型號品牌批號封裝庫存備注價格
SHINDENGE
23+
NA
36486
專做原裝正品,假一罰百!
 詢價
SHINDENGEN
24+/25+
60000
原裝正品現(xiàn)貨庫存價優(yōu)
 詢價
SHINDENGEN
05+
原廠原裝
46533
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
N/A
24+
NA
5645
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
 詢價
SHINDENGEN/新電元
23+
88785
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
DIODES
2021++
原廠正品
15000
原裝正品金芯陽科技自家?guī)齑鏆g迎詢價QQ:2698954303
 詢價
VISHAYMAS
25+23+
R-1
52010
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨
 詢價
DIODES/美臺
2023+
8700
原裝現(xiàn)貨
 詢價
DIODES
23+
10000
原裝正品現(xiàn)貨,德為本,正為先,通天下!
 詢價
君耀
24+
NA
5000
絕對全新原裝正品現(xiàn)貨假一罰十
 詢價
更多D1N20供應(yīng)商 更新時間2025-4-2 17:00:00

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