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IRLI2203

Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A??

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRLI2203G

Power MOSFET(Vdss=30V, Rds(on)=0.010ohm, Id=52A??

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRLI2203N

HEXFET Power MOSFET

VDSS=30VR DS(on)=0.007? ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRLI2203NPBF

HEXFET Power MOSFET

VDSS=30VR DS(on)=0.007? ID=61A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignth

IRF

International Rectifier

IRLI530A

ADVANCED POWER MOSFET

BVDSS=100V RDS(on)=0.12? ID=14A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?175°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLI540G

HEXFET Power MOSFET

DESCRIPTION ThirdGenerationHEXFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplications.

IRF

International Rectifier

IRLI540G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI540N

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLI540NPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRLI610A

Advanced Power MOSFET

BVDSS=200V RDS(on)=1.5? ID=3.3A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IRL

  • 制造商：

    International Rectifier

  • 功能描述：

    Bulk

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
I
23+
D-PAK
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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IR
24+
TO-220
80000
代理進(jìn)口原裝現(xiàn)貨假一賠十
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IR
24+
SOT-23
9544
原裝現(xiàn)貨假一罰十
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ir
24+
N/A
6980
原裝現(xiàn)貨,可開13%稅票
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23+
原廠封裝
9888
專做原裝正品,假一罰百!
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IOR
24+
SMD
2500
新
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IR
1902+
TO
2734
代理品牌
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IR
0
2013
1
SOT-23
 詢價(jià)
IR
24+
SOT23
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅??！
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IR
17+
SOT-23
6200
100%原裝正品現(xiàn)貨
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更多IRL供應(yīng)商 更新時(shí)間2025-4-23 15:34:00

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