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IRLI620

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-indu

IRF

International Rectifier

IRLI620G

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-indu

IRF

International Rectifier

IRLI620G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導體

IRLI620GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

VishayVishay Siliconix

威世科技威世科技半導體

IRLI620GPBF

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-indu

IRF

International Rectifier

IRLI630A

Advanced Power MOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.

IRF

International Rectifier

IRLI630A

ADVANCED POWER MOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLI630G

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)

VDSS=200V RDS(on)=0.40? ID=6.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalins

IRF

International Rectifier

IRLI630G

Power MOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導體

IRLI630GPBF

Power MOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號：

    IRL

  • 制造商：

    International Rectifier

  • 功能描述：

    Bulk

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO-220
80000
代理進口原裝現(xiàn)貨假一賠十
 詢價
IR
24+
SOT-23
9544
原裝現(xiàn)貨假一罰十
 詢價
IR
24+
SOT23-3
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
IR
0
2013
1
SOT-23
 詢價
IR
24+
TO-220FullPak(Iso)
8866
詢價
IR
2015+
TO-220F
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IOR
0541+P
SOT23-3
2842
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
VishayPCS
新
696
全新原裝 貨期兩周
 詢價
IR
24+
TO-220
6430
原裝現(xiàn)貨/歡迎來電咨詢
 詢價
IR
25+23+
TO-263
36947
絕對原裝正品全新進口深圳現(xiàn)貨
 詢價
更多IRL供應商 更新時間2025-4-23 17:29:00

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