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IRLI630A

ADVANCED POWER MOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRLI630A

Advanced Power MOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.

IRF

International Rectifier

IRLI630G

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)

VDSS=200V RDS(on)=0.40? ID=6.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalins

IRF

International Rectifier

IRLI630G

Power MOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導體

IRLI630GPBF

HEXFET Power MOSFET

VDSS=200V RDS(on)=0.40? ID=6.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalins

IRF

International Rectifier

IRLI630GPBF

Power MOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導體

IRLI630A

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRLI630G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRLI630G_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRLI630GPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    IRLI630

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    ADVANCED POWER MOSFET

供應(yīng)商型號品牌批號封裝庫存備注價格
FAIRCHILD/仙童
24+
TO 262
155617
明嘉萊只做原裝正品現(xiàn)貨
詢價
仙童
05+
TO-262
2500
原裝進口
詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
24+
TO-262
6430
原裝現(xiàn)貨/歡迎來電咨詢
詢價
I
22+
TO-220F
6000
十年配單,只做原裝
詢價
I
23+
TO-220F
6000
原裝正品,支持實單
詢價
I
22+
TO-220F
25000
只做原裝進口現(xiàn)貨,專注配單
詢價
I
24+
TO-TO-220F
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
IR
23+
TO-220F
35890
詢價
IR
2016+
TO-220F
6528
房間原裝進口現(xiàn)貨假一賠十
詢價
更多IRLI630供應(yīng)商 更新時間2025-4-7 19:10:00