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NP32N055SLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffect Transistordesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerating ?Superlowon-stateresistance RDS(on)1=24mΩMAX.(VGS=10V,ID=16A) RDS(on)2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP32N055SLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=32A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=24mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

NP33N06YDG

MOS FIELD EFFECT TRANSISTOR

Description TheNP33N06YDGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=14mΩMAX.(VGS=10V,ID=16.5A) ?LowCiss:Ciss=2600pFTYP.(VDS=25V,VGS=0V) ?Logicleveldrivetype ?Des

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP33N06YDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP33N06YDGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=14mΩMAX.(VGS=10V,ID=16.5A) ?LowCiss:Ciss=2600pFTYP.(VDS=25V,VGS=0V) ?Logicleveldrivetype ?Des

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP33N06YDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP33N06YDGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=14mΩMAX.(VGS=10V,ID=16.5A) ?LowCiss:Ciss=2600pFTYP.(VDS=25V,VGS=0V) ?Logicleveldrivetype ?Des

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP33N075YDF

MOS FIELD EFFECT TRANSISTOR

Description TheNP33N075YDFisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=28mΩMAX.(VGS=10V,ID=17A) ?LowCiss:Ciss=1300pFTYP.(VDS=25V,VGS=0V) ?Logicleveldrivetype ?Desi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP33N075YDF-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP33N075YDFisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=28mΩMAX.(VGS=10V,ID=17A) ?LowCiss:Ciss=1300pFTYP.(VDS=25V,VGS=0V) ?Logicleveldrivetype ?Desi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP33N075YDF-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP33N075YDFisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance ?RDS(on)=28mΩMAX.(VGS=10V,ID=17A) ?LowCiss:Ciss=1300pFTYP.(VDS=25V,VGS=0V) ?Logicleveldrivetype ?Desi

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055HHE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffectTransistors designedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)=19mΩMAX.(VGS=10V,ID=17A) ?LowCis

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP34N055HHE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    NP3

  • 制造商：

    Energizer Battery Company

  • 功能描述：

    BATTERY DIGITAL CAMERA FUJI LI-ION

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
正泰
24+
N/A
2100
正泰全系列在售
 詢價(jià)
NEC
23+
TO-252
28610
詢價(jià)
24+
BGA
3000
公司存貨
 詢價(jià)
AMCC
23+
BGA
3700
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購(gòu)!
 詢價(jià)
ON
24+/25+
5000
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
 詢價(jià)
NEC
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
ON
17+
SMB
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
AMCC
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
 詢價(jià)
AMCC
24+
BGA
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
AMCC
0427/0433
BGA
1789
全新原裝絕對(duì)自己公司現(xiàn)貨特價(jià)!
 詢價(jià)
更多NP3供應(yīng)商 更新時(shí)間2025-4-5 11:00:00

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