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NP36P04SDG

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36P06KDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=37.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P06KDG

-60V – -36A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=29.5m?Max.(VGS=-10V,ID=-18A) RDS(on)=37.5m?Max.(VGS=-4.5V,ID=-18A) ?Lowinputcapacitance:Ciss

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06KDG

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=30mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36P06KDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=37.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P06KDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P06KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=29.5mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=37.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P06SLG

MOS FIELD EFFECT TRANSISTOR SWITCHING P-CHANNEL POWER MOSFET

DESCRIPTION TheNP36P06SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=30mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=40mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance Ci

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會社

NP36P06SLG

-60V – -36A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Superlowon-stateresistance:RDS(on)=30m?Max.(VGS=-10V,ID=-18A) RDS(on)=40m?Max.(VGS=-4.5V,ID=-18A) ?Lowinputcapacitance:Ciss=32

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P06SLG

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=30mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36P06SLG-E1-AY

SWITCHING P-CHANNEL POWER MOSFET

DESCRIPTION TheNP36P06SLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=30mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=40mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance Ci

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

詳細(xì)參數(shù)

  • 型號：

    NP3

  • 制造商：

    Energizer Battery Company

  • 功能描述：

    BATTERY DIGITAL CAMERA FUJI LI-ION

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
正泰
24+
N/A
2100
正泰全系列在售
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NEC
23+
TO-252
28610
詢價(jià)
24+
BGA
3000
公司存貨
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AMCC
23+
BGA
3700
絕對全新原裝!現(xiàn)貨!特價(jià)!請放心訂購!
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ON
24+/25+
5000
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
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NEC
12+
TO-252
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
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ON
17+
SMB
6200
100%原裝正品現(xiàn)貨
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AMCC
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
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AMCC
24+
BGA
6980
原裝現(xiàn)貨,可開13%稅票
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AMCC
0427/0433
BGA
1789
全新原裝絕對自己公司現(xiàn)貨特價(jià)!
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更多NP3供應(yīng)商 更新時(shí)間2025-4-5 11:00:00

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