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NP36N055SLE

MOS FIELD EFFECT TRANSISTOR NP36N055HLE, NP36N055ILE, NP36N055SLE

SWITCHING CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-ChannelMOSFieldEffect Transistordesignedforhighcurrentswitchingapplications. FEATURES ?Channeltemperature175degreerated ?Superlowon-stateresistance RDS(on)1=13mΩMAX.(VGS=10V,ID=18A) RDS(on)2=16

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36N055SLE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36N10SDE

MOS FIELD EFFECT TRANSISTOR

Description TheNP36N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)1=33mΩMAX.(VGS=10V,ID=18A) RDS(on)2=39mΩMAX.(VGS=4.5V,ID=18A) ?LowCiss:Ciss=3500pFTYP.(VDS=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36N10SDE

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=36A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=33mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36N10SDE-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP36N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)1=33mΩMAX.(VGS=10V,ID=18A) RDS(on)2=39mΩMAX.(VGS=4.5V,ID=18A) ?LowCiss:Ciss=3500pFTYP.(VDS=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36N10SDE-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP36N10SDEisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ?Lowon-stateresistance RDS(on)1=33mΩMAX.(VGS=10V,ID=18A) RDS(on)2=39mΩMAX.(VGS=4.5V,ID=18A) ?LowCiss:Ciss=3500pFTYP.(VDS=2

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

NP36P04KDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17.0mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=23.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP36P04KDG

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-36A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=17mΩ(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

NP36P04KDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17.0mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=23.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

NP36P04KDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP36P04KDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES ?Superlowon-stateresistance RDS(on)1=17.0mΩMAX.(VGS=?10V,ID=?18A) RDS(on)2=23.5mΩMAX.(VGS=?4.5V,ID=?18A) ?Lowinputcapacitance

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào)：

    NP3

  • 制造商：

    Energizer Battery Company

  • 功能描述：

    BATTERY DIGITAL CAMERA FUJI LI-ION

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
正泰
24+
N/A
2100
正泰全系列在售
 詢價(jià)
NEC
23+
TO-252
28610
詢價(jià)
24+
BGA
3000
公司存貨
 詢價(jià)
AMCC
23+
BGA
3700
絕對(duì)全新原裝!現(xiàn)貨!特價(jià)!請(qǐng)放心訂購!
 詢價(jià)
ON
24+/25+
5000
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
NEC
12+
TO-252
15000
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
 詢價(jià)
ON
17+
SMB
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
AMCC
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
 詢價(jià)
AMCC
24+
BGA
6980
原裝現(xiàn)貨,可開13%稅票
 詢價(jià)
AMCC
0427/0433
BGA
1789
全新原裝絕對(duì)自己公司現(xiàn)貨特價(jià)!
 詢價(jià)
更多NP3供應(yīng)商 更新時(shí)間2025-4-5 11:00:00

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