STF30NM60ND

N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode)

Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybody

STF30NM60ND

N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Description TheFDmesh?IIseriesbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybody

STF30NM60ND

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STF31N65M5

N-channel 650 V, 0.124 typ., 22 A MDmesh V Power MOSFET in D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowonresistance,whichisunmatchedam

STF32N65M5

isc N-Channel MOSFET Transistor

DESCRIPTION ?LowDrain-SourceOn-Resistance FEATURES ?DrainCurrent–ID=24A@TC=25℃ ?DrainSourceVoltage- :VDSS=650V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=119mΩ(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre

STF32N65M5

N-channel 650 V, 0.095 廓, 24 A, MDmesh??V Power MOSFET in D?PAK, I?PAK, TO-220FP, TO-220, TO-247

Description ThesedevicesareN-channelMDmesh?VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH?horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STF32NM50N

isc N-Channel MOSFET Transistor

?DESCRIPTION ?DrainCurrent:ID=22A@TC=25℃ ?DrainSourceVoltage :VDSS=500V(Min) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplications

STF32NM50N

N-channel 500 V, 0.1 廓 typ., 22 A MDmesh??II Power MOSFET in D?PAK, TO-220FP, TO-220, TO-247 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitab

STF33N60DM2

Marking：33N60DM2；Package：TO-220FP；N-channel 600 V, 0.110 Ω typ., 24 A MDmesh? DM2 Power MOSFET in TO-220FP package

Features ?Fast-recoverybodydiode ?Extremelylowgatechargeandinput capacitance ?Lowon-resistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Applications ?Switchingapplications Description ThishighvoltageN-channelPowerMOSFETis partof

STF33N60DM6

N-channel 600 V, 115 m typ., 25 A, MDmesh DM6 Power MOSFET in a TO?220FP package

Features ?Fast-recoverybodydiode ?LowerRDS(on)perareavspreviousgeneration ?Lowgatecharge,inputcapacitanceandresistance ?100avalanchetested ?Extremelyhighdv/dtruggedness ?Zener-protected Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmeshDM