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IRF143

N-Channel Power MOSFETs, 27 A, 60-100 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VGSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF143

N-CHANNEL POWER MOSFETS

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF150

N-CHANNEL POWER MOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF150

N-CHANNEL POWER MOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF150

N-Channel Power MOSFET

DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,motorcontrolcircuits,UPSandgeneralpurposeswitchingapplications. TheNellIRF150isathree-terminalsilicondevicewithcurrentconductioncapabilityof42A,fastswitchingsp

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF150

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS?process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IXYS

IXYS Corporation

IRF150

High Power,High Speed Applications

DESCRIPTION ?DrainCurrentID=40A@TC=25℃ ?DrainSourceVoltage- :VDSS=100V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.055Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF150

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-ChannelPowerMOSFET40A,60V/100V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF150

40A, 100V, 0.055 Ohm, N-Channel Power MOSFET

ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRF150

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance;superiorreverseenergyanddio

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
7000
詢價(jià)
INFINEON/英飛凌
2022+
N/A
5021
全新、原裝
 詢價(jià)
IR
2210
TO-220
260
原裝現(xiàn)貨實(shí)單支持
 詢價(jià)
INFINEON
24+
TO220
8000
原裝，正品
 詢價(jià)
IR
22+
SOP-8
12245
現(xiàn)貨,原廠原裝假一罰十!
 詢價(jià)
IR
14+
TO263
8
原裝
 詢價(jià)
IR
22+
DIP4
400
功率三極管原裝現(xiàn)貨,誠(chéng)信經(jīng)營(yíng)
 詢價(jià)
更多IRF供應(yīng)商 更新時(shí)間2025-4-22 18:10:00

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