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IRF153

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS?process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IXYS

IXYS Corporation

IRF153

N-CHANNEL POWER MOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF1607

N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤7.5m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF1607

Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A??

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1607PBF

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisStripePlanardesignofHEXFET?PowerMOSFETsutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFETpowerMOSFETarea175°Cjunctionoperatingtemp

IRF

International Rectifier

IRF1704

Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?powerMOSFEThasa200°CmaxoperatingtemperaturewithaStripePlanardesignthatutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesofthisHEXFET?

IRF

International Rectifier

IRF1730G

Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A)

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF1740G

HEXFET? Power MOSFET

?IsolatedPackage ?HighVoitageIsolation=2.5KVRMS? ?SinktoLeadCreepageDist.=4.8mm ?Dynamicdv/dtRating ?LowThermalResistance Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesigner withthebestcombinationoffastswitching,ruggedizeddev

IRF

International Rectifier

IRF1840G

Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=4.6A)

IRF1840G->CorrectPartumberIRFI840G 1.IsolatedPackage 2.HighVoltageIsolation=2.5VKRMS 3.SinktoLeadCreepageDist=4.8mm 4.LowThermalResistance

IRF

International Rectifier

IRF1840G

HEXFET? Power MOSFET

ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow.

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
7000
詢價(jià)
IR
19+
TO-220
75120
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
IR
2016+
SOT-163
18070
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
IR
2015+
D-Pak
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
 詢價(jià)
IR
23+
TO-220
9980
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
 詢價(jià)
IRF
24+
SOP-8P
400
現(xiàn)貨
 詢價(jià)
IR
24+
SOT
30617
主打XILINX品牌價(jià)格絕對(duì)優(yōu)勢(shì)
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更多IRF供應(yīng)商 更新時(shí)間2025-4-22 18:10:00

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