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IRF151

High Power,High Speed Applications

DESCRIPTION ?DrainCurrentID=40A@TC=25℃ ?DrainSourceVoltage-:VDSS=60V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.055Ω(Max) ?HighPower,HighSpeedApplications APPLICATIONS ?Switchingpowersupplies ?UPS ?Motorcontrols ?Highenergypulsecircuits.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF151

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS?process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IXYS

IXYS Corporation

IRF151

N-CHANNEL POWER MOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF151

DUAL MOSFET DRIVER

?DualCircuitsCapableofDriving High-CapacitanceLoadsatHighSpeeds ?OutputSupplyVoltageRangeupto24V ?LowStandbyPowerDissipation description TheSN75372isadualNANDgateinterface circuitdesignedtodrivepowerMOSFETsfrom TTLinputs.Itprovideshighcurrentandvol

TITexas Instruments

德州儀器美國德州儀器公司

IRF152

N-CHANNEL POWER MOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF152

HIGH VOLTAGE POWER MOSFET DIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS?process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IXYS

IXYS Corporation

IRF152

N-CHANNEL POWER MOSFETS

FEATURES ●LOWRDS(on) ●ImprovedInductiveruggedness ●Fastswitchingtimes ●Ruggedpolyslllcongatecellstructure ●Lowinputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Highcurrent)

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF152

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-ChannelPowerMOSFET40A,60V/100V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF1520G

HEXFET POWER MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRF153

N-Channel Power MOSFETs, 40 A, 60 V/100 V

N-ChannelPowerMOSFET40A,60V/100V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
23+
263
7000
詢價(jià)
IR
2016+
SOT-163
18070
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
IR
19+
TO-220
75120
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
IR
24+
SOT
30617
主打XILINX品牌價(jià)格絕對優(yōu)勢
 詢價(jià)
IOR
25+
SOP8
3000
強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!
 詢價(jià)
IR
2015+
D-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價(jià)
IR
TO
1100
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
更多IRF供應(yīng)商 更新時(shí)間2025-4-22 18:10:00

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