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IRF220

Nanosecond Switching Speeds

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF220

N-CHANNEL POWER MOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF220-223

N-Channel Power MOSFETs, 7A, 150-200V

N-ChannelPowerMOSFETs7A150-200V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF2204

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRF2204

N-Channel MOSFET Transistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤3.6m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF2204L

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturestothisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandim

IRF

International Rectifier

IRF2204LPBF

HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )

Description ThisHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeatures

IRF

International Rectifier

IRF2204S

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturestothisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandim

IRF

International Rectifier

IRF2204S

Marking：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchinga

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF2204SPBF

HEXFET? Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )

Description ThisHEXFET?PowerMOSFETutilizesthelastestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeatures

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
263
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
263
7000
詢價
IOR
25+
SOP8
3000
強(qiáng)調(diào)現(xiàn)貨,隨時查詢!
 詢價
IRF
24+
SOP-8P
400
現(xiàn)貨
 詢價
IR
2016+
SOT-163
18070
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
IOR
05+
SOP8
860
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
IR
21+
N/A
6850
只做原裝正品假一賠十!正規(guī)渠道訂貨!
 詢價
IR
2015+
D-Pak
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價
更多IRF供應(yīng)商 更新時間2025-4-23 10:00:00

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