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IRF1840G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?IsolatedPackage ?HighVoltageIsolation=2.5kVRMS(t=60s,f=60Hz) ?Sink

VishayVishay Siliconix

威世科技威世科技半導體

IRF1902

Power MOSFET(Vdss=20V)

Description TheseN-ChannelHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplicati

IRF

International Rectifier

IRF1902PBF

HEXFET Power MOSFET

Description TheseN-ChannelHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplicati

IRF

International Rectifier

IRF1902TRPBF

Ultra Low On-Resistance

Description TheseN-ChannelHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievetheextremelylowon-resistancepersiliconarea.Thisbenefitprovidesthedesignerwithanextremelyefficientdeviceforuseinbatteryandloadmanagementapplicati

IRF

International Rectifier

IRF1902TRPBF

N-Channel Enhancement Mode Power MOSFET

Features ?VDS=20V,ID=12A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRF200P222

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=182A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.6mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF2084PBF

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro

IRF

International Rectifier

IRF220

N-Channel Power MOSFETs, 7A, 150-200V

N-ChannelPowerMOSFETs7A150-200V

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF220

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF220

High Speed Applications

DESCRIPTION ?DrainCurrentID=5A@TC=25℃ ?DrainSourceVoltage-:VDSS=200V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=0.8Ω(Max) ?HighSpeedApplications APPLICATIONS ?Switchingpowersupplies

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應商型號品牌批號封裝庫存備注價格
IR
22+
263
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
263
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
263
8000
專注配單,只做原裝進口現(xiàn)貨
 詢價
IR
23+
263
7000
詢價
IRF
24+
SOP-8P
400
現(xiàn)貨
 詢價
IR
19+
TO-220
75120
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
IOR
05+
SOP8
860
原裝現(xiàn)貨海量庫存歡迎咨詢
 詢價
IR
24+
SOT
30617
主打XILINX品牌價格絕對優(yōu)勢
 詢價
IR
04+
TO3P
6000
絕對原裝自己現(xiàn)貨
 詢價
IR
24+
90
全新原裝
 詢價
更多IRF供應商 更新時間2025-4-22 18:10:00

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