首頁 >IRF>規(guī)格書列表

零件編號下載 訂購功能描述/絲印制造商 上傳企業(yè)LOGO

IRF223

Nanosecond Switching Speeds

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF223

N-CHANNEL POWER MOSFETS

FEATURES ?LowRDs

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF224

HEXFET TRANSISTORS

250V1.1ohmHEXFET

IRF

International Rectifier

IRF225

HEXFET TRANSISTORS

250V1.1ohmHEXFET

IRF

International Rectifier

IRF230

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)

200Volt,0.40?HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryachievesverylowonstateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishadvantag

IRF

International Rectifier

IRF230

8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

Intersil

Intersil Corporation

IRF230

N-Channel Power MOSFETs, 12A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF230

N-CHANNEL POWER MOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability ?TO-3package(Standard)

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRF230

N-Channel Power MOSFETs, 12 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRF230

N-Channel Power MOSFETs, 12 A, 150-200 V

Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighpower,highspeedapplications,suchasswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddriversandhighenergypulsecircuits. ●LowRDS(on) ●VQSRatedat±20V ●

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

詳細(xì)參數(shù)

  • 型號：

    IRF

  • 制造商：

    VISHAY

  • 制造商全稱：

    Vishay Siliconix

  • 功能描述：

    Inductors Epoxy Conformal Coated Uniform Roll Coated

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
263
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
263
8000
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
IR
23+
263
7000
詢價
INFINEON/英飛凌
24+
TO-220
46184
只做原裝進(jìn)口現(xiàn)貨
 詢價
英飛凌
23+
TO-220
30000
原裝正品,假一罰十
 詢價
Infineon
22+
NA
493
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價
INFINEON
2024
SOP8
38800
15余年信譽(yù)價格市場最低 力挺實單提供一站式BOM配單服務(wù)!
 詢價
Infineon/英飛凌
D2PAK
6000
詢價
TE/泰科
2508+
/
233927
一級代理，原裝現(xiàn)貨
 詢價
更多IRF供應(yīng)商 更新時間2025-4-22 18:10:00

相關(guān)規(guī)格書

更多

相關(guān)庫存

更多