STF11NM60N

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STF11NM60N

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STF11NM60ND

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description ThedeviceisanN-channelFDmesh?IIPowerMOSFETthatbelongstothesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwi

STF11NM65N

N-channel 650 V, 0.425 廓 typ., 11 A MDmesh??I Power MOSFET in DPAK, TO-220FP, I?PAKFP and TO-220 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuit

STF11NM65N

N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuit

STF11NM80

N-CHANNEL 800V - 0.35ohm - 11A TO-220/FP/D2PAK/TO-247 MDmesh Power MOSFET

Description TheMDmesh?associatesthemultipledrainprocesswiththecompany’sPowerMesh?horizontallayoutassuringanoutstandinglowonresistance.Theadoptionofthecompany’sproprietarystriptechniqueyieldsoveralldynamicperformancethatissignificantlybetterthanthatofsimilar

STF11NM80

Marking：F11NM80；Package：TO-220FP；N-channel 800 V, 0.35 Ω, 11 A MDmesh? Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220, TO-247

Features ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance ■BestRDS(on)*Qgintheindustry Applications ■Switchingapplications Description TheseN-channelPowerMOSFETsare developedusingSTMicroelectronics' revolutionaryMDmesh?technology,which associatesth

STF11NM80

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=11A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforusein

STF-120HV

Three PhaseNeutral Filters For Solar Technology Applications

ThreePhase+NeutralFilters Singlestage Solartechnolotyapplications Compactmodelforsavingspace Lowleakagecurrent

STF120NF10

N-channel 100 V, 0.009 ohm, 110 A STripFET II Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETrealizedwithSTMicroelectronicsuniqueSTripFET?processhasspecificallybeendesignedtominimizetheon-resistance.Itisthereforesuitableasprimaryswitchinadvancedhigh-efficiency,high-frequencyisolatedDC-DCconvertersfortelecom