STF12NK80Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10.5A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.75Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STF12NM50N

N-channel 500V - 0.29廓 - 11A - TO-220 /FP- D2PAK - DPAK Second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh?technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemos

STF12NM60N

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.41Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STF12PF06

P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET

DESCRIPTION ThisPowerMOSFETisthelatestdevelopmentofSTMicroelectronisuniqueSingleFeatureSize?strip-basedprocess.Theresultingtransistorshowsextremelyhighpackingdensityforlowonresistance,ruggedavalanchecharacteristicsandlesscriticalalignmentstepsthereforearemarkab

STF-12-S1

E-Band Faraday Isolator

Description: ModelSTF-12-S1isafullbandFaradayisolatorthatoperatesfrom60to90GHz.TheFaradayisolatorisconstructedwithalongitudinal,magnetizedferriterodthatcausesaFaradayrotationoftheincomingRFsignal.Theisolatoroffers1.5dBtypicalinsertionlossand28dBnomin

STF-12-S1-C

E-Band Full Waveguide Band Compact Faraday Isolator

FEATURES FullWaveguideBandOperation ModerateInsertionLoss HighIsolation CompactFormFactor APPLICATIONS TestLab Instrumentations Sub-assemblies

STF-12-S1-M

E-Band, Mini Faraday Isolator, 0.75” Insertion Length

Description: ModelSTF-12-S1-MisaWR-12miniatureFaradayisolatorthatoperatesfrom60to90GHz.TheminiisolatorutilizesanovelmagneticdesignwithprecisionmachinedhousingstoachievethesmallestFaradayisolatorpackagesizeofferedbyEravant.Duetothenatureofthemagneticcon

STF-12-S1-M2

E-Band, Mini Faraday Isolator, 0.750” Insertion Length

FEATURES FullBandCoverage LowInsertionLoss HighIsolation CompactFormFactor ResistanttoStrayMagneticFields BacksideFlangeScrewAccess APPLICATIONS TestLab Instrumentations Subassemblies

STF130N10F3

N-channel 100 V, 7.8 m廓 typ., 120 A STripFET??II Power MOSFET in TO-220FP, I?PAKFP, H?PAK-2 and TO-220 packages

Description ThesedevicesareN-channelenhancementmodePowerMOSFETsproducedusingSTMicroelectronics’STripFET?IIItechnology,whichisspecificallydesignedtominimizeon-resistanceandgatechargetoprovidesuperiorswitchingperformance. Features ■Ultralowon-resistance ■100avala

STF13N60M2

Low gate input resistance

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh?technology:MDmeshIIPlus?lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They